component
AUIRLU024Z-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAUIRLU024Z-VB
VBsemi Elec · MOSFETs · TO-251
AUIRLU024Z-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage VGS at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDS at 60 V and pulsed drain current IDM at 100 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, the return path of the N-channel MOSFET; the datasheet gives no separate source-pin limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 35 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 30 | A | TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Avalanche Current | IAS | 40 | A | 1 | |||
| Single Avalanche Energy | EAS | 80 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 59.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 46 | °C/W | PCB mount | 1 | ||
| Junction-to-Case (Drain) | RthJC | 2.1 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3.5 | V | VDS = VGS, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | 50 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.032 | Ω | VGS = 10 V, ID = 12 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.037 | Ω | VGS = 4.5 V, ID = 10 A | 2 | ||
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Continuous Current (Body Diode) | IS | 50 | A | TC = 25 °C | 2 | ||
| Pulsed Current (Body Diode) | ISM | 100 | A | 2 | |||
| Forward Voltage | VSD | 0.75 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
AUIRLU024Z-VB - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
auirlu024z-vb-etched.step/auirlu024z-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirlu024z-vb.step/auirlu024z-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
c9598d2a74c04383, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).