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AUIRLR3410-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AUIRLR3410-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AUIRLR3410-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V. |
| 2 | D | passive | Drain of the MOSFET, rated for a drain-source voltage of 100 V and continuous drain current of 20 A at TC=25℃ (VGS=10V). |
| 3 | S | passive | Source of the MOSFET; the datasheet rates the continuous source (body diode) current IS at 20 A and pulsed ISM at 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 87 | mΩ | VGS=10V, ID=10A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 105 | mΩ | VGS=4.5V, ID=8A | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 30 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | Tc=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 20 | A | VGS @ 10V, Tc=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 10 | A | VGS @ 10V, Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 6.1 | mJ | 1 | |||
| Avalanche Current | IAS | 15 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | Tc=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | Note 1 (surface mounted on 1 inch² FR-4 board, 2OZ copper) | 1 |
CAD (KiCad official)
- Symbol:
AUIRLR3410-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
auirlr3410-hxy-etched.step/auirlr3410-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirlr3410-hxy.step/auirlr3410-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
a143f2cbe5409585, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AUIRLR3410-HXY
**HXY MOSFET** · MOSFETs · TO-252-2L
AUIRLR3410-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V. |
| 2 | D | passive | Drain of the MOSFET, rated for a drain-source voltage of 100 V and continuous drain current of 20 A at TC=25℃ (VGS=10V). |
| 3 | S | passive | Source of the MOSFET; the datasheet rates the continuous source (body diode) current IS at 20 A and pulsed ISM at 30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 87 | | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 105 | | mΩ | VGS=4.5V, ID=8A | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 20 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 30 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | Tc=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 20 | A | VGS @ 10V, Tc=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 10 | A | VGS @ 10V, Tc=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 6.1 | mJ | | 1 |
| Avalanche Current | IAS | | | 15 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 34.7 | W | Tc=25℃ | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 3.6 | ℃/W | Note 1 (surface mounted on 1 inch² FR-4 board, 2OZ copper) | 1 |
## CAD (KiCad official)
- Symbol: `AUIRLR3410-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `auirlr3410-hxy-etched.step` / `auirlr3410-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `auirlr3410-hxy.step` / `auirlr3410-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590911466877247488) (6 pp, sha256 `a143f2cbe5409585`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/auirlr3410-hxy-datasheet.pdf)