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AUIRGDC0250
Public Made by Adomby adom
Infineon Technologies IGBTs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAUIRGDC0250
Infineon Technologies · IGBTs · TO-220
AUIRGDC0250 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-to-emitter voltage ±20V, transient ±30V, threshold 3.0V to 6.0V at VCE = VGE, IC = 250µA. |
| 2 | C | passive | Collector; collector-to-emitter voltage up to 1200V, continuous current 141A at TC = 25°C and 81A at TC = 100°C. |
| 3 | E | passive | Emitter; main current return terminal of the n-channel IGBT, pulse collector current up to 99A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Emitter Breakdown Voltage | V(BR)CES | 1200 | V | VGE = 0V, IC = 250µA | 2 | ||
| Collector-to-Emitter Saturation Voltage | VCE(on) | 1.47 | 1.8 | V | IC = 33A, VGE = 15V, TJ = 25°C | 2 | |
| Gate Threshold Voltage | VGE(th) | 3 | 6 | V | VCE = VGE, IC = 250µA | 2 | |
| Collector-to-Emitter Leakage Current | ICES | 250 | µA | VGE = 0V, VCE = 1200V, TJ = 25°C | 2 | ||
| Collector-to-Emitter Leakage Current | ICES | 1000 | µA | VGE = 0V, VCE = 1200V, TJ = 150°C | 2 | ||
| Gate-to-Emitter Leakage Current | IGES | -100 | 100 | nA | VGE = ±20V | 2 | |
| Total Gate Charge (turn-on) | Qg | 151 | 227 | nC | IC = 33A, VGE = 15V, VCC = 600V | 2 | |
| Gate-to-Emitter Charge (turn-on) | Qge | 26 | 39 | nC | IC = 33A, VGE = 15V, VCC = 600V | 2 | |
| Gate-to-Collector Charge (turn-on) | Qgc | 62 | 93 | nC | IC = 33A, VGE = 15V, VCC = 600V | 2 | |
| Turn-Off Switching Loss | Eoff | 15 | 16 | mJ | IC = 33A, VCC = 600V, VGE = 15V, RG = 5, L = 400µH, TJ = 25°C | 2 | |
| Turn-Off delay time | td(off) | 485 | 616 | ns | RG = 5, L = 400µH, TJ = 25°C | 2 | |
| Fall time | tf | 1193 | 1371 | ns | RG = 5, L = 400µH, TJ = 25°C | 2 | |
| Collector-to-Emitter Voltage | VCES | 1200 | V | 1 | |||
| Continuous Collector Current | IC | 141 | A | TC = 25°C | 1 | ||
| Continuous Collector Current | IC | 81 | A | TC = 100°C | 1 | ||
| Pulse Collector Current | ICM | 99 | A | VGE = 15V | 1 | ||
| Clamped Inductive Load Current | ILM | 99 | A | VGE = 20V | 1 | ||
| Continuous Gate-to-Emitter Voltage | VGE | -20 | 20 | V | 1 | ||
| Transient Gate-to-Emitter Voltage | VGE | -30 | 30 | V | 1 | ||
| Maximum Power Dissipation | PD | 543 | W | TC = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 217 | W | TC = 100°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 sec., 0.063 in. (1.6mm) from case | 1 | |||
| Thermal Resistance Junction-to-Case (each IGBT) | RθJC | 0.23 | °C/W | 1 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 62 | °C/W | typical socket mount | 1 | ||
| Thermal Resistance Case-to-Sink | RθCS | 0.5 | °C/W | flat, greased surface | 1 | ||
| Temperature Coeff. of Breakdown Voltage | ΔV(BR)CES/ΔTJ | 1.2 | V/°C | VGE = 0V, IC = 1mA (25°C-150°C) | 2 | ||
| Collector-to-Emitter Saturation Voltage | VCE(on) | 1.56 | V | IC = 33A, VGE = 15V, TJ = 150°C | 2 | ||
| Threshold Voltage temp. coefficient | ΔVGE(th)/ΔTJ | -15 | mV/°C | VCE = VGE, IC = 250µA (25°C-150°C) | 2 | ||
| Forward Transconductance | gfe | 30 | S | VCE = 50V, IC = 33A, PW = 20µS | 2 | ||
| Turn-Off Switching Loss | Eoff | 29 | mJ | IC = 33A, VCC = 600V, VGE = 15V, RG = 5, L = 400µH, TJ = 150°C | 2 | ||
| Turn-Off delay time | td(off) | 689 | ns | RG = 5, L = 400µH, TJ = 150°C | 2 | ||
| Fall time | tf | 2462 | ns | RG = 5, L = 400µH, TJ = 150°C | 2 | ||
| Input Capacitance | Cies | 3804 | pF | VGE = 0V, VCC = 30V, f = 1.0Mhz | 2 | ||
| Output Capacitance | Coes | 161 | pF | VGE = 0V, VCC = 30V, f = 1.0Mhz | 2 | ||
| Reverse Transfer Capacitance | Cres | 31 | pF | VGE = 0V, VCC = 30V, f = 1.0Mhz | 2 |
CAD (KiCad official)
- Symbol:
AUIRGDC0250 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
auirgdc0250-etched.step/auirgdc0250-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirgdc0250.step/auirgdc0250.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
0e8acfb65d273b67, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).