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AUIRG4BC30SSTRL

Infineon Technologies · IGBTs · D2PAK

AUIRG4BC30SSTRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGE up to ±20V maximum, with typical gate threshold of 3.0V to 6.0V.
2 C passive Collector; rated for VCES of 600V and continuous current of 34A at TC = 25°C (18A at TC = 100°C).
3 E passive Emitter; current return of the IGBT, with 7.5nH typical internal emitter inductance measured 5mm from package.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Emitter Breakdown Voltage VCES 600 V 1
Continuous Collector Current IC 34 A TC = 25°C 1
Continuous Collector Current IC 18 A TC = 100°C 1
Pulsed Collector Current ICM 68 A 1
Clamped Inductive Load Current ILM 68 A 1
Gate-to-Emitter Voltage VGE -20 20 V 1
Reverse Voltage Avalanche Energy EARV 10 mJ 1
Maximum Power Dissipation PD 100 W TC = 25°C 1
Maximum Power Dissipation PD 42 W TC = 100°C 1
Operating Junction Temperature TJ -55 150 °C 1
Soldering Temperature 300 °C for 10 seconds, 0.063 in. (1.6mm) from case 1
Collector-to-Emitter Breakdown Voltage V(BR)CES 600 V VGE = 0V, IC = 250µA 2
Emitter-to-Collector Breakdown Voltage V(BR)ECS 18 V VGE = 0V, IC = 1.0A 2
Collector-to-Emitter Saturation Voltage VCE(ON) 1.4 1.6 V IC = 18A VGE = 15V 2
Gate Threshold Voltage VGE(th) 3 6 V VCE = VGE, IC = 250µA 2
Forward Transconductance gfe 6 11 S VCE = 100V, IC = 18A 2
Zero Gate Voltage Collector Current ICES 250 A VGE = 0V, VCE = 600V 2
Zero Gate Voltage Collector Current ICES 2 A VGE = 0V, VCE = 10V, TJ = 25°C 2
Zero Gate Voltage Collector Current ICES 1000 A VGE = 0V, VCE = 600V, TJ = 150°C 2
Gate-to-Emitter Leakage Current IGES -100 100 nA VGE = ±20V 2
Total Gate Charge (turn-on) Qg 50 75 nC IC = 18A 2
Gate-Emitter Charge (turn-on) Qge 7.3 11 nC VCC = 400V See Fig. 8 2
Gate-Collector Charge (turn-on) Qgc 17 26 nC VGE = 15V 2
Turn-Off Delay Time td(off) 540 810 ns IC = 18A, VCC = 480V 2
Fall Time tf 390 590 ns VGE = 15V, RG = 23Ω 2
Total Switching Loss Ets 3.71 5.6 mJ 2
Junction-to-Case Thermal Resistance RθJC 1.2 °C/W 1
Junction-to-Ambient Thermal Resistance (typical socket mount) RθJA 40 °C/W 1
Case-to-Sink Thermal Resistance (flat, greased surface) RθCS 0.5 °C/W Flat, Greased Surface 1

CAD (KiCad official)

  • Symbol: AUIRG4BC30SSTRL
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: auirg4bc30sstrl-etched.step / auirg4bc30sstrl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirg4bc30sstrl.step / auirg4bc30sstrl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 599e3a68d64950b7, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF