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AUIRFS4127TRL

Infineon Technologies · MOSFETs · D2PAK

AUIRFS4127TRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and a gate threshold of 3.0 V min to 5.0 V max at ID = 250µA.
2 D passive Drain; also connected to the tab, with VDSS of 200 V and continuous drain current of 72 A at TC = 25°C.
3 S passive Source; current return path with continuous body-diode source current of 72 A and pulsed 300 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 200 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 18.6 22 mΩ VGS = 10V, ID = 44A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 200V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 250 µA VDS = 200V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 79 S VDS = 50V, ID = 44A 2
Total Gate Charge Qg 150 nC ID = 44A 2
Continuous Source Current (Body Diode) IS 72 A 2
Pulsed Source Current (Body Diode) ISM 300 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 44A, VGS = 0V 2
Continuous Drain Current, TC = 25°C ID 72 A VGS @ 10V 1
Continuous Drain Current, TC = 100°C ID 51 A VGS @ 10V 1
Pulsed Drain Current IDM 300 A 1
Power Dissipation, TC = 25°C PD 375 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt dv/dt 57 V/ns 1
Single Pulse Avalanche Energy EAS 250 mJ Thermally limited 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C 10 seconds, 1.6mm from case 1
Junction-to-Case Thermal Resistance RJC 0.4 °C/W 1
Junction-to-Ambient Thermal Resistance RJA 40 °C/W 1

CAD (KiCad official)

  • Symbol: AUIRFS4127TRL
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: auirfs4127trl-etched.step / auirfs4127trl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirfs4127trl.step / auirfs4127trl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 0e88c2c4f396acbd, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF