AUIRFR4105ZTRPBF-VB

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  "title": "AUIRFR4105ZTRPBF-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated MOSFET gate; VGS absolute max ±20 V. Gate threshold voltage VGS(th) typ. 2 V (1 V min, 3 V max at VDS = VGS, ID = 250 µA). Total gate charge Qg typ. 47 nC at VDS = 30 V, VGS = 10 V, ID = 50 A."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. N-channel MOSFET drain; VDS breakdown 60 V min. Continuous ID = 58 A at TC = 25 °C (package limited), RDS(on) = 10 mΩ typ at VGS = 10 V, ID = 20 A. Also connected to the exposed tab (heat slug) of the TO-252AA package."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. N-channel MOSFET source; continuous source (body diode) current IS = 50 A max. Body diode VSD typ. 1 V (max 1.5 V) at IF = 20 A, VGS = 0 V; trr typ. 45 ns."
      },
      {
        "number": "4",
        "name": "D (Tab)",
        "type": "passive",
        "description": "Exposed thermal tab, internally connected to the Drain (pin 2). Used as the primary heat-sinking path; RthJC = 0.85 °C/W typ."
      }
    ],
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "total": 4,
        "described": 4,
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  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
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  "discovery_pitch": "AUIRFR4105ZTRPBF-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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  "updated_at": "2026-09-24T17:20:30.179Z"
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