component

AUIRFR3710ZTRL

Public Made by Adom

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Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorauirfr3710ztrlfactory-2.0.0extractor-text

Verified AUIRFR3710ZTRL

by Ray · last 9 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

9 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AUIRFR3710ZTRL · DPAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • ✓distributor: lcsc C533335, digikey AUIRFR3710ZTRL-ND, mouser 942-AUIRFR3710ZTRL
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-n15eujf_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ auirfr3710ztrl.kicad_sym✓ auirfr3710ztrl.kicad_mod✓ auirfr3710ztrl.step
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AUIRFR3710ZTRL

Infineon Technologies · MOSFETs · DPAK

AUIRFR3710ZTRL from Infineon Technologies, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the HEXFET power MOSFET; gate threshold voltage is 2.0 V to 4.0 V and VGS maximum is ±20 V.
2 D passive Drain of the MOSFET (also the tab); VDSS is 100 V with continuous drain current of 56 A silicon limited and 42 A package limited.
3 S passive Source of the MOSFET; body diode continuous source current is 56 A max.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package DPAK
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (Silicon Limited) ID 56 A TC = 25°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current (Silicon Limited) ID 39 A TC = 100°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current (Package Limited) ID 42 A TC = 25°C, VGS @ 10V (Package Limited) 1
Pulsed Drain Current IDM 220 A 1
Maximum Power Dissipation PD 140 W TC = 25°C 1
Linear Derating Factor 0.95 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy (Thermally Limited) EAS 150 mJ 1
Single Pulse Avalanche Energy Tested Value EAS (Tested) 200 mJ 1
Operating Junction Temperature TJ -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Junction-to-Case Thermal Resistance RθJC 1.05 °C/W 1
Junction-to-Ambient Thermal Resistance (PCB Mount) RθJA 50 °C/W PCB mount 1
Junction-to-Ambient Thermal Resistance RθJA 110 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Drain-to-Source On-Resistance RDS(on) 15 18 m VGS = 10V, ID = 33A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Forward Transconductance gfs 39 S VDS = 25V, ID = 33A 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 100V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage Current IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage Current IGSS -200 nA VGS = -20V 2
Total Gate Charge Qg 69 100 nC ID = 33A 2
Continuous Source Current (Body Diode) IS 56 A 2
Pulsed Source Current (Body Diode) ISM 220 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 33A, VGS = 0V 2
Reverse Recovery Time trr 35 53 ns TJ = 25°C, IF = 33A, VDD = 50V 2
Reverse Recovery Charge Qrr 41 62 nC di/dt = 100A/µs 2
Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 0.088 V/°C Reference to 25°C, ID = 1mA 2

CAD (KiCad official)

  • Symbol: AUIRFR3710ZTRL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: auirfr3710ztrl-etched.step / auirfr3710ztrl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirfr3710ztrl.step / auirfr3710ztrl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 a458f80217fb137b, retrieved 2026-11-09, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF