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Ray auirfr2607ztr-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the pla… 60a273a 19d ago
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  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate - control input for the N-channel MOSFET. Absolute maximum VGS = ±20 V; typical VGS(th) = 2.5-5 V (VDS = VGS, ID = 250 µA). Input capacitance Ciss ≈ 2400 pF; gate resistance Rg ≈ 1.6 Ω (typ)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain - high-side power terminal of the N-channel MOSFET. VDS(max) = 100 V; continuous ID = 45 A at TC = 25 °C (package limited); pulsed IDM = 140 A. Also electrically tied to the TO-252 tab."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source - low-side power terminal of the N-channel MOSFET and reference for VGS. Integral body diode from Source to Drain: VSD ≈ 0.85 V (typ) at IS = 15 A, trr ≈ 80 ns (typ)."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain tab - the exposed metal heat-sink tab on the TO-252 package is electrically connected to the Drain. Used both as the primary drain connection and as the thermal path (RthJC = 0.85 °C/W typ)."
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  "updated_at": "2026-09-24T17:20:21.913Z"
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