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AUIRFB8409

Infineon Technologies · MOSFETs · TO-220AB

AUIRFB8409 from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; the gate-to-source voltage is rated at ±20V (VGS).
2 D passive Drain terminal; the drain-to-source breakdown voltage is 40V (VDSS) and the package-limited continuous drain current is 195A.
3 S passive Source terminal; the datasheet specifies the continuous source (body diode) current as IS and the pulsed source current as ISM.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 2.2 3.9 V VDS = VGS, ID = 250µA 2
Static Drain-to-Source On-Resistance (TO-220) RDS(on) 1 1.3 mΩ VGS = 10V, ID = 100A 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 40V, VGS = 0V 2
Drain-to-Source Leakage Current at TJ = 125°C IDSS 150 µA VDS = 40V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 150 S VDS = 10V, ID = 100A 2
Total Gate Charge Qg 300 450 nC 2
Diode Forward Voltage VSD 0.86 1.2 V TJ = 25°C, IS = 100A, VGS = 0V 2
Junction-to-Case Thermal Resistance RθJC 0.4 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W PCB Mount 2
Continuous Drain Current (Silicon Limited) ID 409 A TC = 25°C, VGS = 10V 1
Continuous Drain Current (Silicon Limited) ID 289 A TC = 100°C, VGS = 10V 1
Continuous Drain Current (Package Limited) ID 195 A TC = 25°C, VGS = 10V 1
Pulsed Drain Current IDM 1524 A 1
Maximum Power Dissipation PD 375 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbf in 6-32 or M3 screw (1.1 N m) 1

CAD (KiCad official)

  • Symbol: AUIRFB8409
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: auirfb8409-etched.step / auirfb8409-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirfb8409.step / auirfb8409.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 9665c2b5f9454d7e, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF