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AUIRF7341QTR-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsauirf7341qtr-vbfactory-2.0.0extractor-text

Verified AUIRF7341QTR-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AUIRF7341QTR-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-6mmxgmwz/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ auirf7341qtr-vb.kicad_sym✓ auirf7341qtr-vb.kicad_mod✓ auirf7341qtr-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers auirf7341qtr-vb: viewers · Ray 5d ago
auirf7341qtr-vb-etched.glb Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb-etched.step auirf7341qtr-vb: factory component page (tier=lcsc) · Ray 5d ago
auirf7341qtr-vb-hero.glb auirf7341qtr-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
auirf7341qtr-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb.glb Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb.lbr Publish 0.1.0 · Ray 5d ago
auirf7341qtr-vb.step Publish 0.1.0 · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 5d ago

AUIRF7341QTR-VB

VBsemi Elec · MOSFETs · SO-8

AUIRF7341QTR-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (dual device, channel 1); the datasheet rates the continuous source current (diode conduction) IS at 3.6 A.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
3 S2 passive Source of N-channel MOSFET 2 (dual device, channel 2); the datasheet rates the continuous source current (diode conduction) IS at 3.6 A.
4 G2 input Gate of N-channel MOSFET 2; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
5 D2 passive Drain of N-channel MOSFET 2; drain-source voltage is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C.
6 D2 passive Drain of N-channel MOSFET 2 (second drain pin, same net as pin 5); drain-source voltage is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C.
7 D1 passive Drain of N-channel MOSFET 1; drain-source voltage is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C.
8 D1 passive Drain of N-channel MOSFET 1 (second drain pin, same net as pin 7); drain-source voltage is rated 60 V and continuous drain current ID is 7 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7 A TC = 25 °C 1
Continuous Drain Current ID 4 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 3.6 A 1
Pulsed Drain Current IDM 28 A Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 1
Single Pulse Avalanche Current IAS 18 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 16.2 mJ 1
Maximum Power Dissipation PD 4 W TC = 25 °C 1
Maximum Power Dissipation PD 1.3 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient PCB Mount RthJA 110 °C/W Mounted on 1 in square PCB (FR4 material) 1
Junction-to-Foot (Drain) RthJF 34 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 20 A VGS = 10 V, VDS ≥ 5 V 2
Gate-Source Charge Qgs 1.8 2.7 nC VGS = 10 V, VDS = 30 V, ID = 5.3 A 2
Gate-Drain Charge Qgd 2.8 4.2 nC VGS = 10 V, VDS = 30 V, ID = 5.3 A 2
Gate Resistance Rg 1.3 6 Ω f = 1 MHz 2
Output Capacitance Coss 110 140 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 50 62 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Turn-On Delay Time td(on) 7 11 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22.4 33.5 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 2.1 3.2 ns VDD = 30 V, RL = 6.8 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Current ISM 28 A 2
Forward Voltage VSD 0.75 1.1 V IF = 2 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: AUIRF7341QTR-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: auirf7341qtr-vb-etched.step / auirf7341qtr-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirf7341qtr-vb.step / auirf7341qtr-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 5afb97e66bd251f3, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF