AUIRF2804STRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the HEXFET power MOSFET, with a gate-to-source voltage rating of ±20 V and a threshold voltage of 2.0 V to 4.0 V.
2	D	passive	Drain terminal (also connected to the tab), rated for 40 V drain-to-source breakdown and 195 A package-limited continuous current.
3	S	passive	Source terminal of the MOSFET, with 270 A silicon-limited continuous drain current and a body diode rated to 270 A continuous source current.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	D2PAK
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Breakdown Voltage	V(BR)DSS	40			V	VGS = 0V, ID = 250µA	2
Static Drain-to-Source On-Resistance (SMD)	RDS(on)		1.5	2	mΩ	VGS = 10V, ID = 75A	2
Gate Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250µA	2
Forward Transconductance	gfs	130			S	VDS = 10V, ID = 75A	2
Drain-to-Source Leakage Current	IDSS			20	µA	VDS =40 V, VGS = 0V	2
Drain-to-Source Leakage Current (125°C)	IDSS			250	µA	VDS =40V,VGS = 0V,TJ =125°C	2
Gate-to-Source Forward Leakage	IGSS			200	nA	VGS = 20V	2
Gate-to-Source Reverse Leakage	IGSS	-200			nA	VGS = -20V	2
Total Gate Charge	Qg		160	240	nC	ID = 75A, VDS = 32V, VGS = 10V	2
Gate-to-Source Charge	Qgs		41	62	nC	ID = 75A, VDS = 32V, VGS = 10V	2
Gate-to-Drain Charge	Qgd		66	99	nC	ID = 75A, VDS = 32V, VGS = 10V	2
Continuous Source Current (Body Diode)	IS			270	A	MOSFET symbol showing integral reverse p-n junction diode	2
Pulsed Source Current (Body Diode)	ISM			1080	A	MOSFET symbol showing integral reverse p-n junction diode	2
Diode Forward Voltage	VSD			1.3	V	TJ = 25°C,IS = 75A,VGS = 0V	2
Reverse Recovery Time	trr		56	84	ns	TJ = 25°C ,IF = 75A, VDD = 20V, di/dt = 100A/µs	2
Reverse Recovery Charge	Qrr		67	100	nC	TJ = 25°C ,IF = 75A, VDD = 20V, di/dt = 100A/µs	2
Continuous Drain Current (Silicon Limited)	ID			270	A	TC = 25°C, VGS @ 10V	1
Continuous Drain Current (Silicon Limited)	ID			190	A	TC = 100°C, VGS @ 10V	1
Continuous Drain Current (Package Limited)	ID			195	A	TC = 25°C, VGS @ 10V	1
Pulsed Drain Current	IDM			1080	A		1
Maximum Power Dissipation	PD			300	W	TC = 25°C	1
Linear Derating Factor				2	W/°C		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Single Pulse Avalanche Energy (Thermally Limited)	EAS			540	mJ		1
Single Pulse Avalanche Energy Tested Value	EAS (tested)			1160	mJ		1
Operating Junction and Storage Temperature Range	TJ, TSTG	-55		175	°C		1
Soldering Temperature				300	°C	for 10 seconds (1.6mm from case)	1
Junction-to-Case Thermal Resistance	RθJC			0.5	°C/W		1
Junction-to-Ambient Thermal Resistance	RθJA			62	°C/W		1
Junction-to-Ambient Thermal Resistance (PCB Mount, steady state)	RθJA			40	°C/W	PCB Mount, steady state	1
Breakdown Voltage Temp. Coefficient	ΔV(BR)DSS/ΔTJ		0.031		V/°C	Reference to 25°C, ID = 1mA	2
Turn-On Delay Time	td(on)		13		ns	VDD = 20V, ID = 75A, RG= 2.5Ω, VGS = 10V	2
Rise Time	tr		120		ns	VDD = 20V, ID = 75A, RG= 2.5Ω, VGS = 10V	2
Turn-Off Delay Time	td(off)		130		ns	VDD = 20V, ID = 75A, RG= 2.5Ω, VGS = 10V	2
Fall Time	tf		130		ns	VDD = 20V, ID = 75A, RG= 2.5Ω, VGS = 10V	2
Input Capacitance	Ciss		6450		pF	VGS = 0V, VDS = 25V, ƒ = 1.0MHz	2
Output Capacitance	Coss		1690		pF	VGS = 0V, VDS = 25V, ƒ = 1.0MHz	2
Reverse Transfer Capacitance	Crss		840		pF	VGS = 0V, VDS = 25V, ƒ = 1.0MHz	2
Effective Output Capacitance	Coss eff.		2210		pF	VGS = 0V, VDS = 0V to 32V	2
Internal Drain Inductance	LD		4.5		nH	Between lead, 6mm (0.25in.) from package and center of die contact	2
Internal Source Inductance	LS		7.5		nH	Between lead, 6mm (0.25in.) from package and center of die contact	2
Case-to-Sink Thermal Resistance	RθCS		0.5		°C/W	Flat, Greased Surface	1

CAD (KiCad official)

Symbol: AUIRF2804STRL
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: D2PAK (KiCad packages3D, STEP)
3D model files: auirf2804strl-etched.step / auirf2804strl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirf2804strl.step / auirf2804strl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (13 pp, sha256 f6a640e1129364f6, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AUIRF2804STRL

Verified AUIRF2804STRL

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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