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AUIRF1404ZSTRL
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Infineon Technologies MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AUIRF1404ZSTRL
Infineon Technologies · MOSFETs · D2PAK
AUIRF1404ZSTRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated at ±20 V maximum (VGS). |
| 2 | D | passive | Drain terminal; rated 40 V VDSS with 180 A continuous drain current (silicon limited) at TC = 25°C and 160 A (package limited). |
| 3 | S | passive | Source terminal; continuous source (body diode) current is rated at 160 A maximum (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | D2PAK |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 180 | A | TC = 25°C; VGS @ 10V (Silicon Limited) | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 120 | A | TC = 100°C; VGS @ 10V (Silicon Limited) | 1 | ||
| Continuous Drain Current, VGS @ 10V (Package Limited) | ID | 160 | A | TC = 25°C; VGS @ 10V (Package Limited) | 1 | ||
| Pulsed Drain Current | IDM | 710 | A | 1 | |||
| Maximum Power Dissipation | PD | 200 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 1.3 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy (Thermally Limited) | EAS | 330 | mJ | 1 | |||
| Single Pulse Avalanche Energy Tested Value | EAS (tested) | 480 | mJ | 1 | |||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting torque | 10 | lbf•in | 6-32 or M3 screw | 1 | |||
| Mounting torque | 1.1 | N•m | 6-32 or M3 screw | 1 | |||
| Junction-to-Case | RJC | 0.75 | °C/W | 1 | |||
| Junction-to-Ambient | RJA | 62 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 2.7 | 3.7 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Forward Transconductance | gfs | 170 | S | VDS = 25V, ID = 75A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 40 V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 200 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -200 | nA | VGS = -20V | 2 | ||
| Total Gate Charge | Qg | 100 | 150 | nC | ID = 75A | 2 | |
| Continuous Source Current (Body Diode) | IS | 160 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 750 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 28 | 42 | ns | TJ = 25°C, IF = 75A, VDD = 20V | 2 | |
| Reverse Recovery Charge | Qrr | 34 | 51 | nC | di/dt = 100A/µs | 2 | |
| Case-to-Sink, Flat, Greased Surface | RCS | 0.5 | °C/W | Flat, Greased Surface | 1 | ||
| Junction-to-Ambient (PCB Mount, steady state) | RJA | 40 | °C/W | PCB Mount, steady state | 1 |
CAD (KiCad official)
- Symbol:
AUIRF1404ZSTRL - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
auirf1404zstrl-etched.step/auirf1404zstrl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirf1404zstrl.step/auirf1404zstrl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
24cc5eb6520726ff, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AUIRF1404ZSTRL
**Infineon Technologies** · MOSFETs · D2PAK
AUIRF1404ZSTRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated at ±20 V maximum (VGS). |
| 2 | D | passive | Drain terminal; rated 40 V VDSS with 180 A continuous drain current (silicon limited) at TC = 25°C and 160 A (package limited). |
| 3 | S | passive | Source terminal; continuous source (body diode) current is rated at 160 A maximum (IS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | D2PAK |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 180 | A | TC = 25°C; VGS @ 10V (Silicon Limited) | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 120 | A | TC = 100°C; VGS @ 10V (Silicon Limited) | 1 |
| Continuous Drain Current, VGS @ 10V (Package Limited) | ID | | | 160 | A | TC = 25°C; VGS @ 10V (Package Limited) | 1 |
| Pulsed Drain Current | IDM | | | 710 | A | | 1 |
| Maximum Power Dissipation | PD | | | 200 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 1.3 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy (Thermally Limited) | EAS | | | 330 | mJ | | 1 |
| Single Pulse Avalanche Energy Tested Value | EAS (tested) | | | 480 | mJ | | 1 |
| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Mounting torque | | | | 10 | lbf•in | 6-32 or M3 screw | 1 |
| Mounting torque | | | | 1.1 | N•m | 6-32 or M3 screw | 1 |
| Junction-to-Case | RJC | | | 0.75 | °C/W | | 1 |
| Junction-to-Ambient | RJA | | | 62 | °C/W | | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 2.7 | 3.7 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gfs | 170 | | | S | VDS = 25V, ID = 75A | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 40 V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 40V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 200 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -200 | nA | VGS = -20V | 2 |
| Total Gate Charge | Qg | | 100 | 150 | nC | ID = 75A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 160 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 750 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 28 | 42 | ns | TJ = 25°C, IF = 75A, VDD = 20V | 2 |
| Reverse Recovery Charge | Qrr | | 34 | 51 | nC | di/dt = 100A/µs | 2 |
| Case-to-Sink, Flat, Greased Surface | RCS | | 0.5 | | °C/W | Flat, Greased Surface | 1 |
| Junction-to-Ambient (PCB Mount, steady state) | RJA | | 40 | | °C/W | PCB Mount, steady state | 1 |
## CAD (KiCad official)
- Symbol: `AUIRF1404ZSTRL`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files: `auirf1404zstrl-etched.step` / `auirf1404zstrl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `auirf1404zstrl.step` / `auirf1404zstrl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/auirf1404zstrl-datasheet.pdf) (13 pp, sha256 `24cc5eb6520726ff`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/auirf1404zstrl-datasheet.pdf)