component
AUIR2085STR
Public Made by Adomby adom
Infineon Technologies Gate Drivers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownAUIR2085STR
Infineon Technologies · Gate Drivers · SOIC-8
AUIR2085STR from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CS | input | Current sense input to the overcurrent comparator; exceeding the overcurrent threshold (VCS+ 250-350 mV, typ. 300 mV) terminates output pulses and starts a new soft start once the voltage falls back below the threshold. |
| 2 | OSC | passive | Oscillator programming pin, set by a resistor RT from VCC (10 kΩ to 100 kΩ, values below 10 kΩ should be avoided) and a capacitor CT to COM (47 pF to 470 pF), where CT sets the output dead time (50 ns to 200 ns). |
| 3 | COM | power_in | Signal ground and power ground for all functions, requiring a low-impedance ground plane due to high current and high frequency operation. |
| 4 | LO | output | Low side gate drive output that directly drives a power MOSFET gate, capable of 1 A peak source and sink current, and should be placed close to the low side MOSFET gate. |
| 5 | VCC | power_in | Low side logic and bias supply, recommended 10 V to 15 V with an absolute maximum of 25 V, and the undervoltage lockout requires more than 8.5 V (10 V minimum recommended) to ensure specified operation. |
| 6 | VS | power_in | High side floating supply return, to be connected directly to the source of the high side MOSFET; the node must not fly inductively below ground by more than 5 V and has a steady state offset of -5 V to 100 V with a maximum slew rate of 50 V/ns. |
| 7 | HO | output | High side gate drive output that directly drives the high side MOSFET gate, capable of 1 A peak source and sink current, and should be placed close to the gate. |
| 8 | VB | power_in | High side floating supply, derived from a bootstrap circuit with a low-leakage Schottky diode and ceramic capacitor, operating at VS + 10 V to VS + 15 V (absolute maximum 150 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Low side supply voltage | VCC | 25 | V | 5 | |||
| High side floating supply voltage | VB | -0.3 | 150 | V | 5 | ||
| Low side output voltage | VLO | -0.3 | V | Max is VCC + 0.3 (not numeric) | 5 | ||
| OSC pin voltage | OSC | -0.3 | V | Max is VCC + 0.3 (not numeric) | 5 | ||
| CS pin voltage | VCS | -0.3 | V | Max is VCC + 0.3 (not numeric) | 5 | ||
| Allowable offset voltage slew rate | dVs/dt | 50 | V/ns | 5 | |||
| Package power dissipation | PD | 0.625 | W | TA ≤ 25°C | 5 | ||
| Thermal resistance, junction to ambient | RthJA | 200 | °C/W | 5 | |||
| Junction temperature | TJ | 150 | °C | 5 | |||
| Storage temperature | TS | -55 | 150 | °C | 5 | ||
| Lead temperature (soldering) | TL | 300 | °C | soldering, 10 seconds | 5 | ||
| Steady state high side floating supply offset voltage | VS | -5 | 100 | V | Steady state; see footnote † (VS not to fly below ground by more than 5V) | 5 | |
| Supply voltage | VCC | 10 | 15 | V | 5 | ||
| Supply current | ICC | 5 | mA | 5 | |||
| Timing resistor | RT | 10 | 100 | kΩ | 5 | ||
| Timing capacitor | CT | 47 | 470 | pF | 5 | ||
| Operating frequency (per channel) | fosc | 500 | kHz | 5 | |||
| Ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Turn-on rise time | tr | 40 | 60 | ns | VS = 0V | 6 | |
| Turn-off fall time | tf | 20 | 30 | ns | VS = 0V | 6 | |
| Per channel output frequency | fOSC | 500 | kHz | CT = 100pF, RT = 10kΩ | 6 | ||
| HO/LO output dead time | tDT | 50 | ns | 6 | |||
| HO/LO pulse width mismatch | PM | -25 | 25 | ns | VS = 0V ~ 100V | 6 | |
| High level output voltage, VCC or VBS - VO | VOH | 1.5 | V | 6 | |||
| Low level output voltage | VOL | 0.1 | V | 6 | |||
| Offset supply leakage current | IIeak | 50 | µA | 6 | |||
| Quiescent VBS supply current | IQBS | 150 | 6 | ||||
| Quiescent VCC supply current | IQCC | 1.5 | mA | 6 | |||
| Overcurrent shutdown threshold (positive going) | VCS+ | 250 | 300 | 350 | mV | 6 | |
| Overcurrent shutdown threshold (negative going) | VCS- | 150 | 200 | 250 | mV | 6 | |
| Undervoltage positive going threshold | VCCUV+ | 6.8 | 7.3 | 7.8 | V | 6 | |
| Undervoltage negative going threshold | VCCUV- | 6.3 | 6.8 | 7.3 | V | 6 | |
| High side undervoltage positive going threshold | VBSUV+ | 6.8 | 7.3 | 7.8 | V | 6 | |
| High side undervoltage negative going threshold | VBSUV- | 6.3 | 6.8 | 7.3 | V | 6 |
CAD (KiCad official)
- Symbol:
AUIR2085STR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
auir2085str-etched.step/auir2085str-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auir2085str.step/auir2085str.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
4a6b6103ced015a1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).