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AUFR3710Z-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownAUFR3710Z-VB
VBsemi Elec · MOSFETs · TO-252
AUFR3710Z-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1 V min to 4 V max at ID = 250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated 100 V and continuous drain current 85 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-drain diode current 85 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 80 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 80 V, VGS = 0 V, TJ = 175°C | 2 | ||
| On-State Drain Current | ID(on) | 50 | A | VDS = ≥ 5 V, VGS = 10 V | 2 | ||
| Total Gate Charge | Qg | 105 | 160 | nC | VDS = 50 V, VGS = 10 V, ID = 45 A | 2 | |
| Turn-On Delay Time | td(on) | 12 | 25 | ns | VDD = 20 V, RL = 0.6 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 90 | 135 | ns | VDD = 20 V, RL = 0.6 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 55 | 85 | ns | VDD = 20 V, RL = 0.6 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 130 | 195 | ns | VDD = 20 V, RL = 0.6 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Forward Voltage | VSD | 1 | 1.5 | V | IF = 45 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 85 | 140 | ns | IF = 50 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 4.5 | 7 | A | IF = 50 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 0.17 | 0.35 | µC | IF = 50 A, dI/dt = 100 A/µs | 2 | |
| Continuous Source Current | IS | 85 | A | TC = 25 °C | 2 | ||
| Pulsed Source Current | ISM | 140 | A | TC = 25 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0085 | Ω | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0105 | Ω | VGS = 4.5 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.017 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Forward Transconductance | gfs | 25 | S | VDS = 15 V, ID = 20A | 2 | ||
| Output Capacitance | Coss | 565 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 205 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 17 | nC | VDS = 50 V, VGS = 10 V, ID = 45 A | 2 | ||
| Gate-Drain Charge | Qgd | 23 | nC | VDS = 50 V, VGS = 10 V, ID = 45 A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 85 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current | ID | 75 | A | TC = 125 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Avalanche Current | IAS | 75 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 280 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 176 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.75 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 40 | 50 | °C/W | Steady State, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
AUFR3710Z-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aufr3710z-vb-etched.step/aufr3710z-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aufr3710z-vb.step/aufr3710z-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
6ca7c7c0cbf8cbd9, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).