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AUD069N10A

ANHI · MOSFETs · TO-252

AUD069N10A from ANHI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; control input with static gate-source voltage limit of ±20 V.
2 D passive Drain, also connected to the tab; drain-source breakdown voltage 100 V min, continuous drain current 116 A at TC=25°C.
3 S passive Source; power terminal of the N-channel MOSFET with body diode to drain.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 2.5 3.4 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=95V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance (TO252) RDS(on) 5.9 6.9 mΩ VGS=10V, ID=20A, Tj=25°C 4
Gate resistance (intrinsic) RG 1.5 Ω f=1MHz, open drain 4
Transconductance GFS 52 S VDS=5V IDS=20A 4
Continuous drain current ID 116 A TC=25°C 2
Continuous drain current ID 91 A TC=100°C 2
Pulsed drain current ID,pulse 464 A TC=25°C 2
Avalanche energy, single pulse EAS 186 mJ Tc=25℃,VDD=50V,Id=27.3A, L=0.5mH, RG=25Ω 2
Avalanche current, single pulse IAR 27.3 A Tc=25℃, VDD=50V, L=0.5mH, RG=25Ω 2
Gate source voltage (static) VGS -20 20 V static; 2
Power dissipation Ptot 161 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Thermal resistance, junction-case RthJC 1 °C/W 3
Thermal resistance, junction-ambient RthJA 62 °C/W device on PCB, minimal footprint 3
Input capacitance Ciss 3861 pF VGS=0V, VDS=50V, f=1MHz 4
Output capacitance Coss 375 pF VGS=0V, VDS=50V, f=1MHz 4
Reverse transfer capacitance Crss 15.1 pF VGS=0V, VDS=50V, f=1MHz 4
Turn-on delay time td(on) 30 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Rise time tr 56 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Turn-off delay time td(off) 71 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Fall time tf 44 ns VDD=50V,VGS=10V,ID=20A, RG=10Ω 4
Gate to source charge Qgs 16.1 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Gate to drain charge Qgd 18.3 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Gate charge total Qg 63.5 nC VDD=50V, ID=20A, VGS=0 to 10V 4
Diode forward voltage VSD 0.7 V VGS=0V, IF=1A, Tj=25°C 5
Reverse recovery time trr 46 ns VR=30V, IF=20A, diF/dt=300A/µs 5
Reverse recovery charge Qrr 220 nC VR=30V, IF=20A, diF/dt=300A/µs 5
Peak reverse recovery current Irrm 8.6 A VR=30V, IF=20A, diF/dt=300A/µs 5

CAD (KiCad official)

  • Symbol: AUD069N10A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aud069n10a-etched.step / aud069n10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aud069n10a.step / aud069n10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (13 pp, sha256 f8862de944889210, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF