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AUB045N12

ANHI · MOSFETs · TO-263

AUB045N12 from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (Pin 1); gate-source voltage is rated -20 V to 20 V static, with a threshold of 2.5 V min to 4.5 V max at ID=250uA.
2 D passive Drain (Pin 2, also the exposed Tab); drain-source breakdown voltage is 120 V min, with continuous drain current of 152 A at package at TC=25°C.
3 S passive Source (Pin 3); carries the continuous source (body diode) current of up to 169 A at silicon.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current at silicon (TC=25°C) ID 169 A TC=25°C 2
Continuous drain current at package (TC=25°C) ID 152 A TC=25°C 2
Continuous drain current at silicon (TC=100°C) ID 119 A TC=100°C 2
Pulsed drain current ID,pulse 490 A TC=25°C 2
Avalanche energy, single pulse EAS 635 mJ Tc=25℃,VDD=50V,Vgs=10V, L=0.5mH, RG=25Ω 2
Avalanche current, single pulse IAR 50.4 A Tc=25℃, VDD=50V, L=0.5mH, RG=25Ω 2
Gate source voltage (static) VGS -20 20 V static 2
Power dissipation Ptot 310 W TC=25°C 2
Storage temperature Tstg -55 175 °C 2
Operating junction temperature Tj -55 175 °C 2
Soldering temperature TL 300 °C Distance of 1.6mm from case for 10s 2
Thermal resistance, junction - case RthJC 0.48 °C/W 3
Thermal resistance, junction - ambient RthJA 62 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 120 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 2.5 4.5 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=120V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 4.1 4.5 mΩ VGS=10V, ID=20A, Tj=25°C 4
Transconductance Gfs 115.8 S VDS=5V, ID=50A 4
Continuous source current at silicon ISD 169 A Maximum Ratings 5
Diode forward voltage VSD 1.2 V VGS=0V, Is=1A, Tj=25°C 5

CAD (KiCad official)

  • Symbol: AUB045N12
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: aub045n12-etched.step / aub045n12-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aub045n12.step / aub045n12.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (11 pp, sha256 00695e24f71b7b89, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF