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AUB034N10

Public Made by Adom

by adom

ANHI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUB034N10

ANHI · MOSFETs · TO-263

AUB034N10 from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; static gate-source voltage limited to ±20 V, with a threshold of 2 to 4 V at ID=250 µA.
2 D passive Drain, also connected to the exposed tab; drain-source breakdown voltage is 100 V minimum.
3 S passive Source; continuous drain current is 195 A at the package limit (TC=25°C).

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current at silicon ID 214 A TC=25°C 2
Continuous drain current at package ID 195 A TC=25°C 2
Continuous drain current at silicon ID 151 A TC=100°C 2
Pulsed drain current ID,pulse 856 A TC=25°C 2
Avalanche energy, single pulse EAS 512 mJ Tc=25℃,VDD=40V,Vgs=10V, L=1mH, RG=25Ω 2
Avalanche current, single pulse IAR 32 A Tc=25℃, VDD=40V, L=1mH, RG=25Ω 2
Gate source voltage (static) VGS -20 20 V static 2
Power dissipation Ptot 330 W TC=25°C 2
Storage temperature Tstg -55 170 °C 2
Operating junction temperature Tj -55 170 °C 2
Soldering Temperature TL 300 °C Distance of 1.6mm from case for 10s 2
Thermal resistance, junction - case RthJC 0.46 °C/W 3
Thermal resistance, junction - ambient RthJA 63 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 2 4 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=100V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 2.9 3.4 mΩ VGS=10V, ID=80A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: AUB034N10
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: aub034n10-etched.step / aub034n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aub034n10.step / aub034n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (10 pp, sha256 a67ab89c033d3982, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF