component
AUA039N10
Public Made by Adomby adom
ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AUA039N10
ANHI · MOSFETs · TO-220F
AUA039N10 from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement-mode threshold Vth 1.2 to 2.5 V, static gate-source voltage ±20 V max. |
| 2 | D | passive | Drain; VDS 100 V, continuous drain current 125 A and pulsed 437 A at TC=25°C. |
| 3 | S | passive | Source; RDS(on) 3.6 mΩ typ. and 3.9 mΩ max. at VGS=10V, ID=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=80V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 4 | |
| Drain-source on-state resistance (TO220&220F&263) | RDS(on) | 3.6 | 3.9 | mΩ | VGS=10V, ID=20A, Tj=25°C | 4 | |
| Continuous drain current | ID | 125 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 437 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 306 | mJ | Tc=25℃, VDD=50V, I=35A, L=0.1mH, RG=25Ω | 2 | ||
| Avalanche current, single pulse | IAR | 35 | A | Tc=25℃, VDD=50V, L=0.1mH, RG=25Ω | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 2 | |
| Power dissipation (TO220F) | Ptot | 30 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Soldering temperature | TL | 260 | °C | Distance of 1.6mm from case for 10s | 2 | ||
| Thermal resistance, junction - case (TO220F) | RthJC | 4.2 | °C/W | 3 | |||
| Thermal resistance, junction - ambient (TO220F) | RthJA | 60 | °C/W | device on PCB, minimal footprint | 3 |
CAD (KiCad official)
- Symbol:
AUA039N10 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (13 pp, sha256
e8de2787634c2ff4, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AUA039N10
**ANHI** · MOSFETs · TO-220F
AUA039N10 from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement-mode threshold Vth 1.2 to 2.5 V, static gate-source voltage ±20 V max. |
| 2 | D | passive | Drain; VDS 100 V, continuous drain current 125 A and pulsed 437 A at TC=25°C. |
| 3 | S | passive | Source; RDS(on) 3.6 mΩ typ. and 3.9 mΩ max. at VGS=10V, ID=20A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0V, ID=250uA | 4 |
| Gate threshold voltage | V(GS)th | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | uA | VDS=80V, VGS=0V, Tj=25°C | 4 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 4 |
| Drain-source on-state resistance (TO220&220F&263) | RDS(on) | | 3.6 | 3.9 | mΩ | VGS=10V, ID=20A, Tj=25°C | 4 |
| Continuous drain current | ID | | | 125 | A | TC=25°C | 2 |
| Pulsed drain current | ID,pulse | | | 437 | A | TC=25°C | 2 |
| Avalanche energy, single pulse | EAS | | | 306 | mJ | Tc=25℃, VDD=50V, I=35A, L=0.1mH, RG=25Ω | 2 |
| Avalanche current, single pulse | IAR | | | 35 | A | Tc=25℃, VDD=50V, L=0.1mH, RG=25Ω | 2 |
| Gate source voltage (static) | VGS | -20 | | 20 | V | static | 2 |
| Power dissipation (TO220F) | Ptot | | | 30 | W | TC=25°C | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Operating junction temperature | Tj | -55 | | 150 | °C | | 2 |
| Soldering temperature | TL | | | 260 | °C | Distance of 1.6mm from case for 10s | 2 |
| Thermal resistance, junction - case (TO220F) | RthJC | | | 4.2 | °C/W | | 3 |
| Thermal resistance, junction - ambient (TO220F) | RthJA | | | 60 | °C/W | device on PCB, minimal footprint | 3 |
## CAD (KiCad official)
- Symbol: `AUA039N10`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ANHI datasheet](docs/aua039n10-datasheet.pdf) (13 pp, sha256 `e8de2787634c2ff4`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aua039n10-datasheet.pdf)