component
ATM7002KNSA
Public Made by Adomby adom
Agertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ATM7002KNSA
Agertech · MOSFETs · SOT-23
ATM7002KNSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V, with a gate threshold voltage VGS(th) of 1 to 2.5 V at ID=250µA. |
| 2 | Source | passive | Source of the N-channel MOSFET, with a body diode forward voltage VSD of 0.82 V typical and 1.3 V maximum at IS=200mA and VGS=0V. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDS of 60 V, a continuous drain current ID of 300 mA and a pulsed drain current IDM of 800 mA (pulse width ≤ 10 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25 ℃ | 1 | |
| Drain-Source Voltage | VDS | 60 | V | Ta=25 ℃ | 1 | ||
| Drain Current (Continuous) | ID | 300 | mA | Ta=25 ℃ | 1 | ||
| Drain Current (Pulse Width ≤ 10 µs) | IDM | 800 | mA | Ta=25 ℃ | 1 | ||
| Total Power Dissipation | PD | 350 | mW | Ta=25 ℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage | IGSS | -10 | 10 | μA | VDS=0V, VGS=±20V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 3 | Ω | VGS=10V, ID=500mA | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 4 | Ω | VGS=4.5V, ID=200mA | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 4.5 | Ω | VGS=3V, ID=10mA | 2 | ||
| Diode Forward Voltage | VSD | 0.82 | 1.3 | V | IS=200mA, VGS=0V | 2 | |
| Total Gate Charge | Qg | 1.5 | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 | ||
| Gate-Drain Charge | Qgd | 0.4 | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 | ||
| Input Capacitance | Ciss | 28 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 9 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 8.5 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 | ||
| Turn-On Rise Time | tr | 6 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 31.8 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 | ||
| Turn-Off Fall Time | tf | 15.5 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |
CAD (KiCad official)
- Symbol:
ATM7002KNSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
atm7002knsa-etched.step/atm7002knsa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);atm7002knsa.step/atm7002knsa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Agertech datasheet (5 pp, sha256
c383e9f4a9eca73a, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ATM7002KNSA
**Agertech** · MOSFETs · SOT-23
ATM7002KNSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V, with a gate threshold voltage VGS(th) of 1 to 2.5 V at ID=250µA. |
| 2 | Source | passive | Source of the N-channel MOSFET, with a body diode forward voltage VSD of 0.82 V typical and 1.3 V maximum at IS=200mA and VGS=0V. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDS of 60 V, a continuous drain current ID of 300 mA and a pulsed drain current IDM of 800 mA (pulse width ≤ 10 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25 ℃ | 1 |
| Drain-Source Voltage | VDS | | | 60 | V | Ta=25 ℃ | 1 |
| Drain Current (Continuous) | ID | | | 300 | mA | Ta=25 ℃ | 1 |
| Drain Current (Pulse Width ≤ 10 µs) | IDM | | | 800 | mA | Ta=25 ℃ | 1 |
| Total Power Dissipation | PD | | | 350 | mW | Ta=25 ℃ | 1 |
| Operating and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage | IGSS | -10 | | 10 | μA | VDS=0V, VGS=±20V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) | | | 3 | Ω | VGS=10V, ID=500mA | 2 |
| Drain-Source On-Resistance | RDS(ON) | | | 4 | Ω | VGS=4.5V, ID=200mA | 2 |
| Drain-Source On-Resistance | RDS(ON) | | | 4.5 | Ω | VGS=3V, ID=10mA | 2 |
| Diode Forward Voltage | VSD | | 0.82 | 1.3 | V | IS=200mA, VGS=0V | 2 |
| Total Gate Charge | Qg | | 1.5 | | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 |
| Gate-Source Charge | Qgs | | 1.9 | | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 |
| Gate-Drain Charge | Qgd | | 0.4 | | nC | VDS=15V, VGS=4.5V, ID=200mA | 2 |
| Input Capacitance | Ciss | | 28 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 9 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 2 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 8.5 | | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |
| Turn-On Rise Time | tr | | 6 | | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |
| Turn-Off Delay Time | td(off) | | 31.8 | | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |
| Turn-Off Fall Time | tf | | 15.5 | | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 |
## CAD (KiCad official)
- Symbol: `ATM7002KNSA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `atm7002knsa-etched.step` / `atm7002knsa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `atm7002knsa.step` / `atm7002knsa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Agertech datasheet](docs/atm7002knsa-datasheet.pdf) (5 pp, sha256 `c383e9f4a9eca73a`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/atm7002knsa-datasheet.pdf)