component
ATM3404NSA
Public Made by Adomby adom
Agertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
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| atm3404nsa-etched.step | 8d ago |
| atm3404nsa-hero.glb | 8d ago |
| atm3404nsa-hero.overlay.json | 8d ago |
| atm3404nsa.glb | 8d ago |
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| README.md | 8d ago |
ATM3404NSA
Agertech · MOSFETs · SOT-23
ATM3404NSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with VGS rated ±20 V maximum and threshold VGS(th) of 1.2 V min to 2.5 V max at ID=250uA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, with continuous source current IS of 5 A max and pulsed source current ISM of 25 A max. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, with VDS rated 30 V maximum, continuous ID of 5 A (steady state) and pulsed IDM of 25 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 28 | mΩ | VGS=10V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 40 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2.5 | 5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Gate-Source Charge | Qgs | 2.5 | 3.5 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Gate-Drain Charge | Qgd | 2.1 | 2.9 | nC | VDS=15V, VGS=4.5V, ID=5A | 2 | |
| Turn-On Delay Time | Td(on) | 2.4 | 4.8 | ns | VDD=15V, VGS=10V, RG=3.3, ID=5A | 2 | |
| Rise Time | Tr | 7.8 | 14 | ns | VDD=15V, VGS=10V, RG=3.3, ID=5A | 2 | |
| Turn-Off Delay Time | Td(off) | 22 | 44 | ns | VDD=15V, VGS=10V, RG=3.3, ID=5A | 2 | |
| Fall Time | Tf | 4 | 8 | ns | VDD=15V, VGS=10V, RG=3.3, ID=5A | 2 | |
| Input Capacitance | Ciss | 572 | 800 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 81 | 112 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 65 | 91 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 25 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, 10s | ID | 5.8 | A | TA=25℃, VGS @ 10V, 10s | 1 | ||
| Continuous Drain Current, Steady State | ID | 5 | A | TA=25℃, VGS @ 10V, steady state | 1 | ||
| Continuous Drain Current, 10s | ID | 4.6 | A | TA=70℃, VGS @ 10V, 10s | 1 | ||
| Continuous Drain Current, Steady State | ID | 4 | A | TA=70℃, VGS @ 10V, steady state | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Total Power Dissipation, 10s | PD | 1.32 | W | TA=25℃, 10s | 1 | ||
| Total Power Dissipation, Steady State | PD | 1 | W | TA=25℃, steady state | 1 | ||
| Total Power Dissipation, 10s | PD | 0.84 | W | TA=70℃, 10s | 1 | ||
| Total Power Dissipation, Steady State | PD | 0.64 | W | TA=70℃, steady state | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 95 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.025 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -4.8 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 7 | S | VDS=5V, ID=5A | 2 | ||
| Reverse Recovery Time | trr | 19 | nS | IF=5A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 1.04 | nC | IF=5A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
ATM3404NSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
atm3404nsa-etched.step/atm3404nsa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);atm3404nsa.step/atm3404nsa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Agertech datasheet (6 pp, sha256
b9df63acad139273, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).