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AT93C66B-SSHM-B

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Microchip Tech EEPROM, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AT93C66B-SSHM-B

Microchip Tech · EEPROM · SOIC-8

AT93C66B-SSHM-B from Microchip Tech, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS input Chip Select selects the device when driven high; when the device is not selected, DI data is not accepted and DO stays in a high-impedance state.
2 SK input Serial Data Clock synchronizes communication, with DI latched and DO clocked out on the rising edge of SK.
3 DI input Serial Data Input receives instructions, addresses and data, which are latched on the rising edge of SK.
4 DO tri_state Serial Data Output shifts out read data after the rising edge of SK, outputs Ready/Busy status when CS goes high after an erase or write, and is high-impedance when the device is not selected.
5 GND power_in Ground is the ground reference for the power supply and should be connected to the system ground.
6 ORG input Internal Organization selects x16 organization when tied to VCC and x8 organization when tied to GND; if left unconnected with the input loading within the internal pull-up capability, x16 is selected.
7 NC unconnected No Connect pin; the datasheet assigns it no electrical function.
8 VCC power_in Device Power Supply supplies the source voltage to the device, and operation at invalid VCC voltages may produce spurious results and should not be attempted.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Voltage Low (VOL1) VOL1 0.4 V 2.5V ≤ VCC ≤ 5.5V, IOL = 2.1 mA 9
Output High Voltage (VOH1) VOH1 2.4 V 2.5V ≤ VCC ≤ 5.5V, IOH = -0.4 mA 9
Input Low Voltage (VIL1) VIL1 -0.6 0.8 V 2.5V ≤ VCC ≤ 5.5V (Note 2) 8
Input High Voltage (VIH1) VIH1 2 V 2.5V ≤ VCC ≤ 5.5V (Note 2) 8
Supply Voltage VCC1 2.5 5.5 V 8
Supply Voltage VCC2 4.5 5.5 V 8
Supply Current (Read) ICC1 0.5 2 mA VCC = 5.0V, Read at 1 MHz 8
Supply Current (Write) ICC2 0.5 2 mA VCC = 5.0V, Write at 1 MHz 8
Standby Current (2.5V Option) ISB1 3 10 μA VCC = 2.5V, CS = 0V 8
Standby Current (5.0V Option) ISB2 10 15 μA VCC = 5.0V, CS = 0V 8
Input Leakage Current IIL 0.1 3 μA VIN = 0 to VCC 8
Output Leakage Current ILO 0.1 3 μA VOUT = 0 to VCC 8
Clock Frequency, SK fSK 0 2 MHz 4.5V ≤ VCC ≤ 5.5V 9
Clock Frequency, SK fSK 0 1 MHz 2.5V ≤ VCC ≤ 5.5V 9
High Time, SK tSKH 250 ns 2.5V ≤ VCC ≤ 5.5V 9
Low Time, SK tSKL 250 ns 2.5V ≤ VCC ≤ 5.5V 9
Minimum CS Low Time tCS 250 ns 2.5V ≤ VCC ≤ 5.5V 9
CS Setup Time tCSS 50 ns 2.5V ≤ VCC ≤ 5.5V, Relative to SK 9
DI Setup Time tDIS 100 ns 2.5V ≤ VCC ≤ 5.5V, Relative to SK 9
CS Hold Time tCSH 0 ns Relative to SK 9
DI Hold Time tDIH 100 ns 2.5V ≤ VCC ≤ 5.5V, Relative to SK 9
Output Delay to 1 tPD1 250 ns 4.5V ≤ VCC ≤ 5.5V 9
Output Delay to 1 tPD1 500 ns 2.5V ≤ VCC ≤ 5.5V 9
Output Delay to 0 tPD0 250 ns 4.5V ≤ VCC ≤ 5.5V 9
Output Delay to 0 tPD0 500 ns 2.5V ≤ VCC ≤ 5.5V 9
CS to Status Valid tSV 250 ns 2.5V ≤ VCC ≤ 5.5V 9
CS to DO in High-impedance tDF 100 ns 4.5V ≤ VCC ≤ 5.5V, CS = VIL 9
CS to DO in High-impedance tDF 150 ns 2.5V ≤ VCC ≤ 5.5V, CS = VIL 9
Write Cycle Time tWP 5 ms 2.5V ≤ VCC ≤ 5.5V 9
Time required after VCC is stable before device accepts commands tPUP 100 µs 10
Power-on Reset Threshold Voltage VPOR 1.5 V 10
Minimum time at VCC = 0V between power cycles tPOFF 500 ms 10
Output Capacitance (DO) COUT 5 pF VOUT = 0V, TA = 25°C, F = 1.0 MHz, VCC = +5V 11
Input Capacitance (CS, SK, DI, ORG) CIN 5 pF VIN = 0V, TA = 25°C, F = 1.0 MHz, VCC = +5V 11
Write Endurance 1e+06 Write Cycles TA = 25°C, VCC = 5.0V 11
Data Retention 100 Years TA = 55°C 11
Operating Temperature (Case), Automotive Range -40 125 °C 8
VCC Power Supply, Low-Voltage Grade VCC 2.5 5.5 V 8
Temperature under bias -55 125 °C 8
Storage temperature -65 150 °C 8
VCC VCC 6.25 V 8
Voltage on any pin with respect to ground -1 7 V 8
DC output current 5 mA 8
ESD protection 2 kV 8

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin 8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC] © 2017 Microchip Technology Inc. 18

CAD (KiCad official)

  • Symbol: AT93C66B-SSHM-B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: at93c66b-sshm-b-etched.step / at93c66b-sshm-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); at93c66b-sshm-b.step / at93c66b-sshm-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (27 pp, sha256 b2c92ec7874801eb, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF