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AT4N33-CuH-D
Public Made by Adomby adom
AOTE Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AT4N33-CuH-D
AOTE · Transistor, Photovoltaic Output Optoisolators · DIP-6
AT4N33-CuH-D from AOTE, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | input | Anode of the AlGaAs infrared emitting diode input, rated for 60 mA forward current, 1 A peak forward current (t=10 µs), and 6 V reverse voltage with 120 mW input power dissipation. |
| 2 | Cathode | passive | Cathode of the AlGaAs infrared emitting diode input, sharing the input ratings of 60 mA forward current, 1 A peak (t=10 µs), 6 V reverse voltage and 120 mW input power dissipation. |
| 3 | NC | unconnected | Listed as NC (no connection) in the pin configuration, so it is not connected internally and is not assigned a rating. |
| 4 | Emitter | passive | Emitter of the silicon planar darlington phototransistor output, rated at 7 V emitter-base breakdown and 7 V emitter-collector voltage. |
| 5 | Collector | output | Collector of the darlington phototransistor output, rated at 55 V collector-emitter voltage, 55 V collector-base breakdown, 150 mA collector current, and 200 mW total power dissipation. |
| 6 | Base | passive | Base of the darlington phototransistor output; the datasheet gives no separate base rating for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AOTE |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Current | IF | 60 | mA | 4 | |||
| Peak Forward Current | IFM | 1 | A | t=10μs | 4 | ||
| Reverse Voltage | Vr | 6 | V | 4 | |||
| Input Power Dissipation | Pd | 120 | mW | 4 | |||
| Collector - Emitter Voltage | Vceo | 55 | V | 4 | |||
| Collector-Base Breakdown Voltage | Vcbo | 55 | V | 4 | |||
| Emitter - Collector Voltage | Veco | 7 | V | 4 | |||
| Emitter-Base Breakdown Voltage | Vebo | 7 | V | 4 | |||
| Collector Current | Ic | 150 | mA | 4 | |||
| Power Dissipation (TA=25°C) | Pc | 150 | mA | TA=25°C | 4 | ||
| Total Power Dissipation | PTot | 200 | mW | 4 | |||
| Operating Temperature | Topr | -55 | ℃ | 4 | |||
| Storage Temperature | Tstg | -55 | ℃ | 4 | |||
| Isolation Voltage | Viso | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | 4 | ||
| Forward Voltage | VF | 1.24 | 1.4 | V | 5 | ||
| Reverse Current | IR | 10 | μA | 5 | |||
| Input Capacitance | Cin | 50 | pF | 5 | |||
| Collector Dark Current | ICEO | 100 | nA | VCE=10V | 5 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 55 | V | IC=10.1mA | 5 | ||
| Current Transfer Ratio | VOL | 500 | % | IF=10 mA, VCE=10V | 5 | ||
| Collector-Emitter Saturation Voltage | IOH | 1 | V | IF=8 mA, IC=2mA | 5 | ||
| Capacitance (Input to Output) | CI-O | 0.8 | F | V=0,f = 1 MHz | 5 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | ③框架类型 Lead Frame ( Cu: 铜框架 Copper) | 3 |
CAD (KiCad official)
- Symbol:
AT4N33-CuH-D - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
at4n33-cuh-d-etched.step/at4n33-cuh-d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);at4n33-cuh-d.step/at4n33-cuh-d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AOTE datasheet (14 pp, sha256
101265dd0c09bcc5, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AT4N33-CuH-D
**AOTE** · Transistor, Photovoltaic Output Optoisolators · DIP-6
AT4N33-CuH-D from AOTE, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | input | Anode of the AlGaAs infrared emitting diode input, rated for 60 mA forward current, 1 A peak forward current (t=10 µs), and 6 V reverse voltage with 120 mW input power dissipation. |
| 2 | Cathode | passive | Cathode of the AlGaAs infrared emitting diode input, sharing the input ratings of 60 mA forward current, 1 A peak (t=10 µs), 6 V reverse voltage and 120 mW input power dissipation. |
| 3 | NC | unconnected | Listed as NC (no connection) in the pin configuration, so it is not connected internally and is not assigned a rating. |
| 4 | Emitter | passive | Emitter of the silicon planar darlington phototransistor output, rated at 7 V emitter-base breakdown and 7 V emitter-collector voltage. |
| 5 | Collector | output | Collector of the darlington phototransistor output, rated at 55 V collector-emitter voltage, 55 V collector-base breakdown, 150 mA collector current, and 200 mW total power dissipation. |
| 6 | Base | passive | Base of the darlington phototransistor output; the datasheet gives no separate base rating for this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AOTE |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Current | IF | | | 60 | mA | | 4 |
| Peak Forward Current | IFM | | | 1 | A | t=10μs | 4 |
| Reverse Voltage | Vr | | | 6 | V | | 4 |
| Input Power Dissipation | Pd | | | 120 | mW | | 4 |
| Collector - Emitter Voltage | Vceo | | | 55 | V | | 4 |
| Collector-Base Breakdown Voltage | Vcbo | | | 55 | V | | 4 |
| Emitter - Collector Voltage | Veco | | | 7 | V | | 4 |
| Emitter-Base Breakdown Voltage | Vebo | | | 7 | V | | 4 |
| Collector Current | Ic | | | 150 | mA | | 4 |
| Power Dissipation (TA=25°C) | Pc | | | 150 | mA | TA=25°C | 4 |
| Total Power Dissipation | PTot | | | 200 | mW | | 4 |
| Operating Temperature | Topr | -55 | | | ℃ | | 4 |
| Storage Temperature | Tstg | -55 | | | ℃ | | 4 |
| Isolation Voltage | Viso | | | 5000 | Vrms | AC For 1 Minute, R.H. = 40 ~ 60% | 4 |
| Forward Voltage | VF | | 1.24 | 1.4 | V | | 5 |
| Reverse Current | IR | | | 10 | μA | | 5 |
| Input Capacitance | Cin | | 50 | | pF | | 5 |
| Collector Dark Current | ICEO | | | 100 | nA | VCE=10V | 5 |
| Collector-Emitter Breakdown Voltage | BVCEO | 55 | | | V | IC=10.1mA | 5 |
| Current Transfer Ratio | VOL | | 500 | | % | IF=10 mA, VCE=10V | 5 |
| Collector-Emitter Saturation Voltage | IOH | | | 1 | V | IF=8 mA, IC=2mA | 5 |
| Capacitance (Input to Output) | CI-O | | 0.8 | | F | V=0,f = 1 MHz | 5 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | | ③框架类型 Lead Frame ( Cu: 铜框架 Copper) | 3 |
## CAD (KiCad official)
- Symbol: `AT4N33-CuH-D`
- Footprint: `Package_DIP:DIP-6_W7.62mm`
- 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files: `at4n33-cuh-d-etched.step` / `at4n33-cuh-d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `at4n33-cuh-d.step` / `at4n33-cuh-d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AOTE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603356592042110976) (14 pp, sha256 `101265dd0c09bcc5`, retrieved 2026-10-17, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/at4n33-cuh-d-datasheet.pdf)