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AT25XE161D-MAHN-T
Public Made by Adomby adom
Adesto Technologies NOR FLASH, USON-8-EP(2x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownAT25XE161D-MAHN-T
Adesto Technologies · NOR FLASH · USON-8-EP(2x3)
AT25XE161D-MAHN-T from Adesto Technologies, in a USON-8-EP(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CS | input | Chip select input: asserting CS low selects the device and starts an operation, and deasserting it deselects the device, places SO in high-impedance, and returns it to standby (not Deep Power-Down). |
| 2 | SO (I/O1) | bidirectional | Serial output that shifts data out on the falling edge of SCK and is high-impedance when the device is deselected; it acts as I/O1 in dual and quad read modes. |
| 3 | WP (I/O2) | bidirectional | Write protect input that controls hardware locking of the Status Register, internally pulled high and recommended to be tied to VCC, and that becomes I/O2 when the QE bit is set. |
| 4 | GND | power_in | Ground reference for the power supply, to be connected to system ground. |
| 5 | SI (I/O0) | bidirectional | Serial input latched on the rising edge of SCK for all command, address and write data, and becomes I/O0 in multi-I/O read modes. |
| 6 | SCK | input | Serial clock: command, address and input data on SI are latched on the rising edge, and output data on SO is clocked out on the falling edge. |
| 7 | HOLD/RESET (I/O3) | bidirectional | Internally pulled-high pin configurable as an active-low HOLD that pauses serial communication or as an active-low RESET per Status Register 3 bit 7 when QE is cleared, and it is I/O3 when QE is set. |
| 8 | VCC | power_in | Device power supply pin for 1.65V to 3.6V operation; invalid VCC voltages may produce spurious results and should not be attempted. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Adesto Technologies |
| Package | USON-8-EP(2x3) |
| Category | Memory |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Temperature under bias | -55 | 125 | °C | 125 | |||
| Storage Temperature | -65 | 150 | °C | 125 | |||
| All input voltages (including NC pins) with respect to ground | -0.6 | V | upper limit printed as VCC + 0.5V | 125 | |||
| All output voltages with respect to ground | -0.6 | V | upper limit printed as VCC + 0.5V | 125 | |||
| Operating Temperature (Case) | -40 | 85 | °C | 125 | |||
| VCC Power Supply | VCC | 1.65 | 3.6 | V | 125 | ||
| Ultra-Deep Power-Down Current | IUDPD | 7 | 250 | nA | CS = VCC. All other inputs at 0V or VCC | 125 | |
| Deep Power-Down Current | IDPD | 8.2 | 17.5 | µA | CS, RESET, WP = VCC. All other inputs at 0V or VCC | 125 | |
| Standby Current | ISB | 30 | 50 | µA | CS, RESET, WP = VCC. All other inputs at 0V or VCC | 125 | |
| Active Current, SPI (33 MHz) | ICC1 | 5.2 | 8.5 | mA | SPI (33 MHz) IOUT = 0mA | 125 | |
| Active Current, SPI (108 MHz) | ICC1 | 8 | 12.5 | mA | SPI (108 MHz) IOUT = 0mA | 125 | |
| Active Current, Dual (108 MHz) | ICC1 | 10.2 | 15 | mA | Dual (108 MHz) IOUT = 0mA | 125 | |
| Active Current, Quad (108 MHz) | ICC1 | 12.4 | 17.5 | mA | Quad (108 MHz) IOUT = 0mA | 125 | |
| Active Current, Program Operation | ICC3 | 8.6 | 13 | mA | CS = VCC | 125 | |
| Active Current, Erase Operation | ICC4 | 9.6 | 14.5 | mA | CS = VCC | 125 | |
| Input Load Current | ILI | -2 | 2 | µA | All inputs at CMOS levels | 125 | |
| Output Leakage Current | ILO | -2 | 2 | µA | All inputs at CMOS levels | 126 | |
| Output Low Voltage | VOL | 0.2 | V | IOL = 100 µA | 126 | ||
| Maximum clock frequency for all operations (except 03h, 0Bh, 3Bh) | fSCK | 108 | MHz | 1.65V to 3.6V column | 126 | ||
| Maximum clock frequency for 0Bh and 3Bh commands | fSCK | 104 | MHz | 1.65V to 3.6V column | 126 | ||
| Maximum clock frequency for 03h command (Read Array, Low Frequency) | fRDLF | 40 | MHz | 126 | |||
| SCK High Time | tCLKH | 4.5 | ns | 126 | |||
| SCK Low Time | tCLKL | 4.5 | ns | 126 | |||
| Minimum CS High Time | tCSH | 35 | ns | 126 | |||
| CS Low Setup Time (relative to clock) | tCSLS | 6 | ns | 126 | |||
| CS Low Hold Time (relative to clock) | tCSLH | 6 | ns | 126 | |||
| Data In Setup Time | tDS | 2 | ns | 127 | |||
| Data In Hold Time | tDH | 1 | ns | 127 | |||
| Output Disable Time | tDIS | 8 | ns | 127 | |||
| Output Valid Time | tV | 8 | ns | 127 | |||
| Output Hold Time | tOH | 0 | ns | 127 | |||
| HOLD Low to Output High-Z | tHLQZ | 7 | ns | 127 | |||
| HOLD High to Output Low-Z | tHHQX | 7 | ns | 127 | |||
| Write Protect Setup Time | tWPS | 20 | ns | 127 | |||
| Write Protect Hold Time | tWPH | 100 | ns | 127 | |||
| CS High to Deep Power-Down | tEDPD | 3 | µs | 127 | |||
| CS High to Ultra Deep Power-Down | tEUDPD | 3 | µs | 127 | |||
| Resume from Terminate Command Time | tSWTERM | 50 | µs | 127 | |||
| Resume from Software Reset Time | tSWRST | 260 | µs | 127 | |||
| Resume from Ultra Deep Power-Down Time | tRUDPD | 160 | 260 | µs | maximum valid for UDPD hold time >400ms | 127 | |
| Resume from Deep Power-Down Time | tRDPD | 35 | µs | 127 | |||
| Read-Modify-Write Time | tRWM | 13 | 82 | ms | 1.65V - 3.6V column | 128 | |
| Page Program Time (256 Bytes) | tPP | 4.4 | 6.5 | ms | 1.65V - 3.6V column | 128 | |
| Page Erase Time | tPE | 10 | 75 | ms | 1.65V - 3.6V column | 128 | |
| Block Erase Time 4 kB | tBLKE | 85 | 180 | ms | 1.65V - 3.6V column | 128 | |
| Block Erase Time 32 kB | tBLKE | 590 | 1300 | ms | 1.65V - 3.6V column | 128 | |
| Block Erase Time 64 kB | tBLKE | 1200 | 2500 | ms | 1.65V - 3.6V column | 128 | |
| Resume Time (Program) | tRES | 8 | 10 | µs | 1.65V - 3.6V column | 128 | |
| Resume Time (Erase) | tRES | 8 | 10 | µs | 1.65V - 3.6V column | 128 | |
| OTP Security Register Program Time (<= 10K) | tOTPP | 5 | 6 | ms | 1.65V - 3.6V column | 128 | |
| Write Status Register Time | tWRSR | 7.5 | 15 | ms | 1.65V - 3.6V column | 128 | |
| Minimum VCC to full operation permitted | tVCSL | 260 | µs | 129 | |||
| VCC rise time (from 0V to VCCmin) | tVR | 1 | 30000 | µs/V | 129 | ||
| VCC brown-out low time | tPWD | 300 | µs | 129 | |||
| Maximum VCC brown-out | VPWDMAX | 0.2 | V | 129 | |||
| Program Time (Byte Program) | tBP | 32 | µs | program time after first byte varies | 128 | ||
| Chip Erase Time (16M density) | tCHPE | 37 | sec | 1.65V - 3.6V column | 128 | ||
| Suspend Time (Program) | tSUS | 50 | µs | 1.65V - 3.6V column | 128 |
CAD (KiCad official)
- Symbol:
AT25XE161D-MAHN-T - Footprint:
Package_SON:SON-8-1EP_3x2mm_P0.5mm_EP1.4x1.6mm - 3D model: USON-8-EP(2x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
at25xe161d-mahn-t-etched.step/at25xe161d-mahn-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);at25xe161d-mahn-t.step/at25xe161d-mahn-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Adesto Technologies datasheet (141 pp, sha256
33fdbf34249e1966, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).