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AT21CS11-STU10-T
Public Made by Adomby adom
Microchip Tech EEPROM, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AT21CS11-STU10-T
Microchip Tech · EEPROM · SOT-23-3
AT21CS11-STU10-T from Microchip Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SI/O | bidirectional | Open-drain bidirectional serial input/output that must be pulled high through an external pull-up resistor, and also supplies device power from 2.7V to 4.5V on the AT21CS11. |
| 2 | NC | unconnected | No Connect pin on the 3-lead SOT23 package, with no electrical function specified in the datasheet. |
| 3 | GND | power_in | Ground reference for the power supply, which should be connected to the system ground. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | SOT-23-3 |
| Category | Memory |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Temperature (Case) | -40 | 85 | °C | Industrial Temperature Range | 8 | ||
| VPUP Pull-up Voltage Voltage Range | VPUP | 2.7 | 4.5 | V | AT21CS11 operating range | 8 | |
| Pull-up Voltage | VPUP | 2.7 | 4.5 | V | High-Speed mode | 9 | |
| Pull-up Resistance | RPUP | 0.2 | 1.8 | kΩ | VPUP = 2.7V | 9 | |
| Pull-up Resistance | RPUP | 0.4 | 5.4 | kΩ | VPUP = 4.5V | 9 | |
| Active Current, Read | IA1 | 0.08 | 0.3 | mA | VPUP = 4.5V; SI/O = VPUP | 9 | |
| Active Current, Write | IA2 | 0.2 | 0.5 | mA | VPUP = 4.5V | 9 | |
| Standby Current | ISB | 0.6 | 1.5 | µA | VPUP = 2.7V; SI/O = VPUP | 9 | |
| Standby Current | ISB | 0.7 | 3 | µA | VPUP = 4.5V; SI/O = VPUP | 9 | |
| Input Low Level | VIL | -0.6 | 0.5 | V | 9 | ||
| SI/O Hysteresis | VHYS | 0.128 | 1.4 | V | 9 | ||
| Output Low Level | VOL | 0 | 0.4 | V | IOL = 4 mA | 9 | |
| Bus Capacitance | CBUS | 1000 | pF | 9 | |||
| Reset Low Time, Device in Inactive State | tRESET | 96 | µs | High Speed | 10 | ||
| Discharge Low Time, Device in Active Write Cycle (tWR) | tDSCHG | 150 | µs | 10 | |||
| Reset Recovery Time | tRRT | 8 | µs | High Speed | 10 | ||
| Discovery Response Request | tDRR | 1 | µs | High Speed | 10 | ||
| Discovery Response Acknowledge Time | tDACK | 8 | 24 | µs | High Speed | 10 | |
| Master Strobe Discovery Response Time | tMSDR | 2 | 6 | µs | High Speed | 10 | |
| SI/O High Time for Start/Stop Condition | tHTSS | 150 | µs | High Speed | 10 | ||
| Bit Frame Duration | tBIT | 25 | µs | Input and Output Bit Frame; High Speed | 10 | ||
| SI/O Low Time, Logic '0' Condition | tLOW0 | 6 | 16 | µs | Input Bit Frame; High Speed | 10 | |
| SI/O Low Time, Logic '1' Condition | tLOW1 | 1 | 2 | µs | Input Bit Frame; High Speed | 10 | |
| Master SI/O Low Time During Read | tRD | 1 | µs | Output Bit Frame; High Speed | 10 | ||
| Master Read Strobe Time | tMRS | 2 | µs | Output Bit Frame; High Speed | 11 | ||
| Data Output Hold Time (Logic '0') | tHLD0 | 2 | 6 | µs | Output Bit Frame; High Speed | 11 | |
| Slave Recovery Time | tRCV | 2 | µs | Input and Output Bit Frame; High Speed | 11 | ||
| Write Cycle Time | tWR | 5 | ms | VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode | 11 | ||
| Write Endurance | 1e+06 | Write Cycles | VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode | 11 | |||
| Data Retention | 100 | Years | TA = 55°C | 11 | |||
| Temperature under bias | -55 | 125 | °C | 8 | |||
| Storage temperature | -65 | 150 | °C | 8 | |||
| Voltage on any pin with respect to ground | -0.6 | V | 8 | ||||
| DC output current | 15 | mA | 8 |
CAD (KiCad official)
- Symbol:
AT21CS11-STU10-T - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
at21cs11-stu10-t-etched.step/at21cs11-stu10-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);at21cs11-stu10-t.step/at21cs11-stu10-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (47 pp, sha256
75dfc953749e0deb, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AT21CS11-STU10-T
**Microchip Tech** · EEPROM · SOT-23-3
AT21CS11-STU10-T from Microchip Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SI/O | bidirectional | Open-drain bidirectional serial input/output that must be pulled high through an external pull-up resistor, and also supplies device power from 2.7V to 4.5V on the AT21CS11. |
| 2 | NC | unconnected | No Connect pin on the 3-lead SOT23 package, with no electrical function specified in the datasheet. |
| 3 | GND | power_in | Ground reference for the power supply, which should be connected to the system ground. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | SOT-23-3 |
| Category | Memory |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Temperature (Case) | | -40 | | 85 | °C | Industrial Temperature Range | 8 |
| VPUP Pull-up Voltage Voltage Range | VPUP | 2.7 | | 4.5 | V | AT21CS11 operating range | 8 |
| Pull-up Voltage | VPUP | 2.7 | | 4.5 | V | High-Speed mode | 9 |
| Pull-up Resistance | RPUP | 0.2 | | 1.8 | kΩ | VPUP = 2.7V | 9 |
| Pull-up Resistance | RPUP | 0.4 | | 5.4 | kΩ | VPUP = 4.5V | 9 |
| Active Current, Read | IA1 | | 0.08 | 0.3 | mA | VPUP = 4.5V; SI/O = VPUP | 9 |
| Active Current, Write | IA2 | | 0.2 | 0.5 | mA | VPUP = 4.5V | 9 |
| Standby Current | ISB | | 0.6 | 1.5 | µA | VPUP = 2.7V; SI/O = VPUP | 9 |
| Standby Current | ISB | | 0.7 | 3 | µA | VPUP = 4.5V; SI/O = VPUP | 9 |
| Input Low Level | VIL | -0.6 | | 0.5 | V | | 9 |
| SI/O Hysteresis | VHYS | 0.128 | | 1.4 | V | | 9 |
| Output Low Level | VOL | 0 | | 0.4 | V | IOL = 4 mA | 9 |
| Bus Capacitance | CBUS | | | 1000 | pF | | 9 |
| Reset Low Time, Device in Inactive State | tRESET | 96 | | | µs | High Speed | 10 |
| Discharge Low Time, Device in Active Write Cycle (tWR) | tDSCHG | 150 | | | µs | | 10 |
| Reset Recovery Time | tRRT | 8 | | | µs | High Speed | 10 |
| Discovery Response Request | tDRR | 1 | | | µs | High Speed | 10 |
| Discovery Response Acknowledge Time | tDACK | 8 | | 24 | µs | High Speed | 10 |
| Master Strobe Discovery Response Time | tMSDR | 2 | | 6 | µs | High Speed | 10 |
| SI/O High Time for Start/Stop Condition | tHTSS | 150 | | | µs | High Speed | 10 |
| Bit Frame Duration | tBIT | | | 25 | µs | Input and Output Bit Frame; High Speed | 10 |
| SI/O Low Time, Logic '0' Condition | tLOW0 | 6 | | 16 | µs | Input Bit Frame; High Speed | 10 |
| SI/O Low Time, Logic '1' Condition | tLOW1 | 1 | | 2 | µs | Input Bit Frame; High Speed | 10 |
| Master SI/O Low Time During Read | tRD | 1 | | | µs | Output Bit Frame; High Speed | 10 |
| Master Read Strobe Time | tMRS | | | 2 | µs | Output Bit Frame; High Speed | 11 |
| Data Output Hold Time (Logic '0') | tHLD0 | 2 | | 6 | µs | Output Bit Frame; High Speed | 11 |
| Slave Recovery Time | tRCV | 2 | | | µs | Input and Output Bit Frame; High Speed | 11 |
| Write Cycle Time | tWR | | | 5 | ms | VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode | 11 |
| Write Endurance | | 1e+06 | | | Write Cycles | VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode | 11 |
| Data Retention | | 100 | | | Years | TA = 55°C | 11 |
| Temperature under bias | | -55 | | 125 | °C | | 8 |
| Storage temperature | | -65 | | 150 | °C | | 8 |
| Voltage on any pin with respect to ground | | -0.6 | | | V | | 8 |
| DC output current | | | | 15 | mA | | 8 |
## CAD (KiCad official)
- Symbol: `AT21CS11-STU10-T`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `at21cs11-stu10-t-etched.step` / `at21cs11-stu10-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `at21cs11-stu10-t.step` / `at21cs11-stu10-t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Microchip Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588940159878639616) (47 pp, sha256 `75dfc953749e0deb`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/at21cs11-stu10-t-datasheet.pdf)