component

ASW65R041EFDA

Public Made by Adom

by adom

ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsasw65r041efdafactory-2.0.0extractor-text

Changed since verified ASW65R041EFDA

by Ray · last 6 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ASW65R041EFDA · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-g19fli3e/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! asw65r041efda.kicad_sym✓ asw65r041efda.kicad_mod✓ asw65r041efda.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
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← Commit history

Publish 0.1.2

Ray ·4feed2e331 · ·parent e2d31c9
2 files changed +244−8
package.json+241−3page.json+3−5
package.json+241−3
@@ -1,6 +1,6 @@ {   "slug": "asw65r041efda",-  "version": "0.1.1",+  "version": "0.1.2",   "type": "component",   "description": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "tags": [@@ -44,7 +44,7 @@       "symbol": "asw65r041efda.kicad_sym",       "footprint": "asw65r041efda.kicad_mod",       "model_3d": "asw65r041efda-hero.glb",-      "model_3d_plain": "asw65r041efda-etched.glb",+      "model_3d_plain": "asw65r041efda.glb",       "model_3d_step": "asw65r041efda-etched.step",       "model_3d_step_plain": "asw65r041efda.step",       "lbr": "asw65r041efda.lbr"@@ -161,5 +161,243 @@         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }     ]-  }+  },+  "title": "ASW65R041EFDA",+  "brief": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "metadata": {+    "specs": {+      "Manufacturer": "ANHI",+      "Package": "TO-247",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "4910bbe97b694adfc19860fb68d862857de29647b5224c6b7e8b8b8a145cf922",+      "rows": [+        {+          "name": "Continuous drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed drain current",+          "symbol": "ID,pulse",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 240,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche energy, single pulse",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 16000,+          "conditions": "Tc=25℃,VDD=50V,L = 20mH, RG=25Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche current, single pulse",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "Tc=25℃,VDD=50V,L = 20mH, RG=25Ω",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 26,+          "conditions": "VDS=0...150V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate source voltage (static)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "static;",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate source voltage (dynamic)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "AC (f>1 Hz)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 500,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature",+          "symbol": "Tj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse diode dv/dt",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance, junction - case",+          "symbol": "RthJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 0.205,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance, junction - ambient",+          "symbol": "RthJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62,+          "conditions": "device on PCB, minimal footprint",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 655,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=10mA",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "V(GS)th",+          "kind": "electrical",+          "unit": "V",+          "min": 3,+          "typ": null,+          "max": 5,+          "conditions": "VDS=VGS, ID=250uA",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "uA",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "VDS=650V, VGS=0V, Tj=25°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS=30V, VDS=0V",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.035,+          "max": 0.041,+          "conditions": "VGS=10V, ID=28A, Tj=25°C",+          "source_page": 4,+          "source": "datasheet"+        }+      ]+    }+  },+  "discovery_triggers": [+    "asw65r041efda"+  ],+  "discovery_pitch": "ASW65R041EFDA (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",+  "visibility": "public" }
page.json+3−5
@@ -4,7 +4,7 @@   "slug": "asw65r041efda",   "title": "ASW65R041EFDA",   "brief": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",-  "version": "0.1.1",+  "version": "0.1.2",   "license": "CC-BY-SA-4.0",   "tags": [     "component",@@ -25,7 +25,7 @@       "symbol": "asw65r041efda.kicad_sym",       "footprint": "asw65r041efda.kicad_mod",       "model_3d": "asw65r041efda-hero.glb",-      "model_3d_plain": "asw65r041efda-etched.glb",+      "model_3d_plain": "asw65r041efda.glb",       "model_3d_step": "asw65r041efda-etched.step",       "model_3d_step_plain": "asw65r041efda.step",       "lbr": "asw65r041efda.lbr"@@ -412,9 +412,7 @@     "asw65r041efda-etched.glb",     "asw65r041efda-etched.step"   ],-  "visibility": {-    "public": true-  },+  "visibility": "public",   "description": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "org": "adom" }\ No newline at end of file