component
ASW65R041EFDA
Public Made by Adomby adom
ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASW65R041EFDA
ANHI · MOSFETs · TO-247
ASW65R041EFDA from ANHI, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement-mode threshold Vth 3 to 5 V, static VGS rated ±20 V and dynamic (AC, f>1 Hz) ±30 V. |
| 2 | D | passive | Drain, also connected to the package tab; drain-source breakdown voltage min 655 V, continuous drain current 80 A at TC=25°C and pulsed 240 A. |
| 3 | S | passive | Source; body diode connects source to drain, with reverse diode dv/dt up to 50 V/ns. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 80 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 240 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 16000 | mJ | Tc=25℃,VDD=50V,L = 20mH, RG=25Ω | 2 | ||
| Avalanche current, single pulse | IAR | 10 | A | Tc=25℃,VDD=50V,L = 20mH, RG=25Ω | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt | 26 | V/ns | VDS=0...150V | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static; | 2 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 2 | |
| Power dissipation | Ptot | 500 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25°C | 2 | ||
| Thermal resistance, junction - case | RthJC | 0.205 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA | 4 | ||
| Gate threshold voltage | V(GS)th | 3 | 5 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 5 | uA | VDS=650V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.035 | 0.041 | Ω | VGS=10V, ID=28A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
ASW65R041EFDA - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
asw65r041efda-etched.step/asw65r041efda-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asw65r041efda.step/asw65r041efda.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (10 pp, sha256
4910bbe97b694adf, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).