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ASW65R031EFD

ANHI · MOSFETs · TO-247

ASW65R031EFD from ANHI, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; enhancement mode with threshold Vth of 3.2 to 4.8 V and a maximum static gate-source voltage of ±20 V.
2 D passive Drain, also connected to the tab; VDS of 700 V at Tj,max and continuous drain current of 89 A at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET, with the body diode between source and drain.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-247
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: ASW65R031EFD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: asw65r031efd-etched.step / asw65r031efd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asw65r031efd.step / asw65r031efd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (11 pp, sha256 718f194f65d37130, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF