component
ASM712H
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech ESD And Surge Protection (TVS/ESD), SOT-23(TO-236). Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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ASM712H
Yangzhou Yangjie Elec Tech · ESD And Surge Protection (TVS/ESD) · SOT-23(TO-236)
ASM712H from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O 1 | passive | ESD-protected I/O line 1; reverse standoff 12V to pin 3 (breakdown 13.3V min at 1mA), peak pulse current 30A (8/20µs) to pin 3. |
| 2 | I/O 2 | passive | ESD-protected I/O line 2; reverse standoff 12V to pin 3 (breakdown 13.3V min at 1mA), peak pulse current 30A (8/20µs) to pin 3. |
| 3 | GND | power_in | Common ground/return pin; reverse standoff 7V toward pins 1 and 2 (breakdown 7.5V min at 1mA), peak pulse current 38A (8/20µs) from pin 3 to pin 1 or 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Junction Temperature | TJ | -55 | 125 | ℃ | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| IEC61000-4-2 (ESD) Air | VESD | -30 | 30 | KV | Device stressed with ten non-repetitive ESD pulses (footnote 1) | 1 | |
| IEC61000-4-2 (ESD) Contact | VESD | -30 | 30 | KV | Device stressed with ten non-repetitive ESD pulses (footnote 1) | 1 | |
| Peak Pulse Power | PPP | 600 | 1000 | W | Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 (footnote 2) | 1 | |
| Peak Pulse Current, Pin 1 or 2 to Pin 3 | IPP | 30 | A | Non-repetitive current pulse 8/20μs per IEC61000-4-5 (footnote 2) | 1 | ||
| Peak Pulse Current, Pin 3 to Pin 1 or 2 | IPP | 38 | A | Non-repetitive current pulse 8/20μs per IEC61000-4-5 (footnote 2) | 1 | ||
| Reverse Standoff Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VRWM | 12 | V | Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Reverse Standoff Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VRWM | 7 | V | Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Reverse Leakage Current (Pin 1 to Pin 3 and Pin 2 to Pin 3) | IR | 0.5 | uA | VR = VRWM, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Reverse Leakage Current (Pin 3 to Pin 1 and Pin 3 to Pin 2) | IR | 0.5 | uA | VR = VRWM, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Breakdown Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | V(BR) | 13.3 | V | IT = 1mA, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Breakdown Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | V(BR) | 7.5 | V | IT = 1mA, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Clamping Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VC | 19 | V | IPP = 1A (8/20μs pulse), Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Clamping Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VC | 11 | V | IPP = 1A (8/20μs pulse), Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Clamping Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VC | 25 | V | IPP = 30A (8/20μs pulse), Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Clamping Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VC | 17 | V | IPP = 38A (8/20μs pulse), Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Junction Capacitance (Pin 1 to Pin 3 and Pin 2 to Pin 3) | CJ | 75 | pF | VR = 0V, f = 1MHz, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Junction Capacitance (Pin 3 to Pin 1 and Pin 3 to Pin 2) | CJ | 75 | pF | VR = 0V, f = 1MHz, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Junction Capacitance (Pin 1 to Pin 3 and Pin 2 to Pin 3) | CJ | 38 | pF | VR = VRWM, f = 1MHz, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 | ||
| Junction Capacitance (Pin 3 to Pin 1 and Pin 3 to Pin 2) | CJ | 55 | pF | VR = VRWM, f = 1MHz, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 | ||
| Thermal Resistance Junction-to-Ambient (Typical) | RθJ-A | 357 | ℃/W | Typical, Ta=25℃ | 2 | ||
| Thermal Resistance Junction-to-Case (Typical) | RθJ-C | 143 | ℃/W | Typical, Ta=25℃ | 2 |
CAD (KiCad official)
- Symbol:
ASM712H - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
asm712h-etched.step/asm712h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asm712h.step/asm712h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
1a2dd2e69fb09eb0, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASM712H
**Yangzhou Yangjie Elec Tech** · ESD And Surge Protection (TVS/ESD) · SOT-23(TO-236)
ASM712H from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O 1 | passive | ESD-protected I/O line 1; reverse standoff 12V to pin 3 (breakdown 13.3V min at 1mA), peak pulse current 30A (8/20µs) to pin 3. |
| 2 | I/O 2 | passive | ESD-protected I/O line 2; reverse standoff 12V to pin 3 (breakdown 13.3V min at 1mA), peak pulse current 30A (8/20µs) to pin 3. |
| 3 | GND | power_in | Common ground/return pin; reverse standoff 7V toward pins 1 and 2 (breakdown 7.5V min at 1mA), peak pulse current 38A (8/20µs) from pin 3 to pin 1 or 2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Circuit Protection |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Junction Temperature | TJ | -55 | | 125 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| IEC61000-4-2 (ESD) Air | VESD | -30 | | 30 | KV | Device stressed with ten non-repetitive ESD pulses (footnote 1) | 1 |
| IEC61000-4-2 (ESD) Contact | VESD | -30 | | 30 | KV | Device stressed with ten non-repetitive ESD pulses (footnote 1) | 1 |
| Peak Pulse Power | PPP | 600 | | 1000 | W | Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 (footnote 2) | 1 |
| Peak Pulse Current, Pin 1 or 2 to Pin 3 | IPP | | | 30 | A | Non-repetitive current pulse 8/20μs per IEC61000-4-5 (footnote 2) | 1 |
| Peak Pulse Current, Pin 3 to Pin 1 or 2 | IPP | | | 38 | A | Non-repetitive current pulse 8/20μs per IEC61000-4-5 (footnote 2) | 1 |
| Reverse Standoff Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VRWM | | | 12 | V | Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Reverse Standoff Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VRWM | | | 7 | V | Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Reverse Leakage Current (Pin 1 to Pin 3 and Pin 2 to Pin 3) | IR | | | 0.5 | uA | VR = VRWM, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Reverse Leakage Current (Pin 3 to Pin 1 and Pin 3 to Pin 2) | IR | | | 0.5 | uA | VR = VRWM, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Breakdown Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | V(BR) | 13.3 | | | V | IT = 1mA, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Breakdown Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | V(BR) | 7.5 | | | V | IT = 1mA, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Clamping Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VC | | | 19 | V | IPP = 1A (8/20μs pulse), Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Clamping Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VC | | | 11 | V | IPP = 1A (8/20μs pulse), Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Clamping Voltage (Pin 1 to Pin 3 and Pin 2 to Pin 3) | VC | | | 25 | V | IPP = 30A (8/20μs pulse), Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Clamping Voltage (Pin 3 to Pin 1 and Pin 3 to Pin 2) | VC | | | 17 | V | IPP = 38A (8/20μs pulse), Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Junction Capacitance (Pin 1 to Pin 3 and Pin 2 to Pin 3) | CJ | | 75 | | pF | VR = 0V, f = 1MHz, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Junction Capacitance (Pin 3 to Pin 1 and Pin 3 to Pin 2) | CJ | | 75 | | pF | VR = 0V, f = 1MHz, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Junction Capacitance (Pin 1 to Pin 3 and Pin 2 to Pin 3) | CJ | | 38 | | pF | VR = VRWM, f = 1MHz, Pin 1 to Pin 3 and Pin2 to Pin 3 | 2 |
| Junction Capacitance (Pin 3 to Pin 1 and Pin 3 to Pin 2) | CJ | | 55 | | pF | VR = VRWM, f = 1MHz, Pin 3 to Pin 1 and Pin3 to Pin 2 | 2 |
| Thermal Resistance Junction-to-Ambient (Typical) | RθJ-A | | 357 | | ℃/W | Typical, Ta=25℃ | 2 |
| Thermal Resistance Junction-to-Case (Typical) | RθJ-C | | 143 | | ℃/W | Typical, Ta=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `ASM712H`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `asm712h-etched.step` / `asm712h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asm712h.step` / `asm712h.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603373292967780352) (5 pp, sha256 `1a2dd2e69fb09eb0`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asm712h-datasheet.pdf)