component
ASDM60P12KQ-R
Public Made by Adomby adom
ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM60P12KQ-R
ASDsemi · MOSFETs · TO-252
ASDM60P12KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of -1.0 V min to -2.5 V max at ID=-250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead position is trimmed on the 2-lead package); VDS is -60 V max and continuous ID is -12 A. |
| 3 | S | passive | Source; the body diode forward current IS is -12 A max and pulsed drain current IDM is -48 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -12 | A | 1 | |||
| Pulsed Drain Current | IDM | -48 | A | 1 | |||
| Maximum Power Dissipation | PD | 50 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | 1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) | 62 | 70 | mΩ | VGS=-10V, ID=-14A | 2 | |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 78 | 90 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-14A | 2 | ||
| Diode Forward Current | IS | -12 | A | 2 |
CAD (KiCad official)
- Symbol:
ASDM60P12KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm60p12kq-r-etched.step/asdm60p12kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm60p12kq-r.step/asdm60p12kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
72766a01eb46660a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).