# ASDM60N30KQ-R

**ASDsemi** · MOSFETs · TO-252

ASDM60N30KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.0 to 2.5 V at ID=250μA. |
| 2 | D | passive | Drain (also the tab); VDSS 60 V, continuous 30 A at TC=25℃, pulsed 120 A. |
| 3 | S | passive | Source; body diode continuous forward current 30 A, pulsed 120 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID |  |  | 20 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 72 | mJ | note2: TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Power Dissipation | PD |  |  | 55 | W | TC = 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.7 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=48V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 23 | 36 | mΩ | VGS=10V, ID=15A; note3: Pulse Width≤300μs, Duty Cycle≤0.5% | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 29 | 42 | mΩ | VGS=4.5V, ID=10A; note3: Pulse Width≤300μs, Duty Cycle≤0.5% | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 30 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 120 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `ASDM60N30KQ-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asdm60n30kq-r-etched.step` / `asdm60n30kq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm60n30kq-r.step` / `asdm60n30kq-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226443641643008) (8 pp, sha256 `a1a07866653f8ba8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asdm60n30kq-r-datasheet.pdf)