← Commit history

Publish 0.1.1

Ray ·d4a345c765 · ·parent 079afcb
2 files changed +226−10
package.json+219−4
@@ -1,6 +1,6 @@ {   "slug": "asdm540g-r",-  "version": "0.1.0",+  "version": "0.1.1",   "type": "component",   "description": "Ascend MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "tags": [@@ -29,7 +29,8 @@     "viewers/footprint.html",     "asdm540g-r-hero.glb",     "asdm540g-r-hero.overlay.json",-    "asdm540g-r-etched.glb"+    "asdm540g-r-etched.glb",+    "asdm540g-r-etched.step"   ],   "component": {     "mpn": "ASDM540G-R",@@ -43,7 +44,7 @@       "symbol": "asdm540g-r.kicad_sym",       "footprint": "asdm540g-r.kicad_mod",       "model_3d": "asdm540g-r-hero.glb",-      "model_3d_plain": "asdm540g-r-etched.glb",+      "model_3d_plain": "asdm540g-r.glb",       "model_3d_step": "asdm540g-r-etched.step",       "model_3d_step_plain": "asdm540g-r.step",       "lbr": "asdm540g-r.lbr"@@ -159,5 +160,219 @@         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }     ]-  }+  },+  "title": "ASDM540G-R",+  "brief": "Ascend MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "metadata": {+    "specs": {+      "Manufacturer": "Ascend",+      "Package": "TO-263",+      "Category": "Triode/MOS Tube/Transistor",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "d05a020b6ff6972423530e708ccb99228db3e85a0dd64b979eac34a584e59e9a",+      "rows": [+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 100,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS=100V,VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±20V,VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1,+          "typ": 1.6,+          "max": 2.4,+          "conditions": "VDS=VGS,ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 31,+          "max": 35,+          "conditions": "VGS=10V, ID=12A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 33,+          "max": 45,+          "conditions": "VGS=4.5V, ID=12A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.2,+          "conditions": "VGS=0V,IS=20A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Continuous",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 33,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Pulsed",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 132,+          "conditions": "Note 1",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 70,+          "conditions": "Tc=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 96,+          "conditions": "Note 2",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ,TSTG",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Case",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 1.15,+          "max": null,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 40,+          "max": null,+          "conditions": "PCB mount",+          "source_page": 1,+          "source": "datasheet"+        }+      ]+    }+  },+  "discovery_triggers": [+    "asdm540g-r"+  ],+  "discovery_pitch": "ASDM540G-R (Ascend) component page: datasheet pinout, KiCad symbol, footprint and 3D.",+  "visibility": "public" }
page.json+7−6
@@ -4,7 +4,7 @@   "slug": "asdm540g-r",   "title": "ASDM540G-R",   "brief": "Ascend MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",-  "version": "0.1.0",+  "version": "0.1.1",   "license": "CC-BY-SA-4.0",   "tags": [     "component",@@ -25,7 +25,7 @@       "symbol": "asdm540g-r.kicad_sym",       "footprint": "asdm540g-r.kicad_mod",       "model_3d": "asdm540g-r-hero.glb",-      "model_3d_plain": "asdm540g-r-etched.glb",+      "model_3d_plain": "asdm540g-r.glb",       "model_3d_step": "asdm540g-r-etched.step",       "model_3d_step_plain": "asdm540g-r.step",       "lbr": "asdm540g-r.lbr"@@ -384,9 +384,10 @@     "viewers/footprint.html",     "asdm540g-r-hero.glb",     "asdm540g-r-hero.overlay.json",-    "asdm540g-r-etched.glb"+    "asdm540g-r-etched.glb",+    "asdm540g-r-etched.step"   ],-  "visibility": {-    "public": true-  }+  "visibility": "public",+  "description": "Ascend MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "org": "adom" }\ No newline at end of file