component
ASDM4614S-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
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| docs | 17d ago |
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| asdm4614s-r-etched.step | 17d ago |
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| asdm4614s-r.glb | 17d ago |
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ASDM4614S-R
ASDsemi · MOSFETs · SOP-8
ASDM4614S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 7A continuous drain current rating). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -6A continuous drain current rating). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (-40V drain-source rating). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (-40V drain-source rating). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (40V drain-source rating). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (40V drain-source rating). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 7 | A | 1 | |||
| Continuous Drain Current (P-Channel) | ID | -6 | A | 1 | |||
| Pulsed Drain Current (N-Channel) | IDM | 20 | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -20 | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 2 | W | 1 | |||
| Maximum Power Dissipation (P-Channel) | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range (N-Channel) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction and Storage Temperature Range (P-Channel) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | μA | VDS=32V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 2.5 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | 28 | 35 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | 36 | 45 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Diode Forward Voltage (N-Channel) | VSD | 1.3 | V | VGS=0V,IS=3A | 2 | ||
| Diode Forward Current (N-Channel) | IS | 4 | A | 2 | |||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VDS=-32V, VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -2.5 | V | VDS=VGS,ID=-250μA | 3 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | 38 | 46 | mΩ | VGS=-10V, ID=-6A | 3 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | 70 | mΩ | VGS=-4.5V, ID=-3A | 3 | ||
| Forward Transconductance (P-Channel) | gFS | 10 | S | VDS=-5V,ID=-4.1A | 3 | ||
| Diode Forward Voltage (P-Channel) | VSD | -1.3 | V | VGS=0V,IS=-1A | 3 | ||
| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA | 89 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA | 90 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
ASDM4614S-R - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
asdm4614s-r-etched.step/asdm4614s-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm4614s-r.step/asdm4614s-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (12 pp, sha256
5ab4607e0bcdca91, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).