component
ASDM40N80KQ-R
Public Made by Adomby adom
ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM40N80KQ-R
ASDsemi · MOSFETs · TO-252
ASDM40N80KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), with threshold of 1 V min to 2.5 V max at VDS=VGS, IDS=250µA. |
| 2 | D | passive | Drain; 40 V maximum drain-source voltage (VDSS) with 80 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; the 80 A continuous diode forward current (IS) at TC=25°C flows through the body diode from source to drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Continuous Drain Current@TC | ID | 80 | A | TC=25°C (VGS=10V) | 1 | ||
| Continuous Drain Current@TC | ID | 51 | A | TC=100°C (VGS=10V) | 1 | ||
| Continuous Drain Current@TA | ID | 25 | A | TA=25°C (VGS=10V), footnote ③ | 1 | ||
| Continuous Drain Current@TA | ID | 19 | A | TA=70°C (VGS=10V), footnote ③ | 1 | ||
| Diode Continuous Forward Current | IS | 80 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDP | 320 | A | TC=25°C, 300µs pulse (footnote ①) | 1 | ||
| Maximum Power Dissipation@TC | PD | 65 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation@TC | PD | 26 | W | TC=100°C | 1 | ||
| Maximum Power Dissipation@TA | PD | 4.2 | W | TA=25°C, footnote ③ | 1 | ||
| Maximum Power Dissipation@TA | PD | 2.7 | W | TA=70°C, footnote ③ | 1 | ||
| Avalanche Energy, Single Pulsed | EAS | 121 | mJ | Single pulsed (footnote ④) | 1 | ||
| Thermal Resistance-Junction to Case | RJC | 2.4 | °C/W | 1 | |||
| Thermal Resistance-Junction to Ambient | RJA | 62 | °C/W | footnote ③ (mounted on large heat sink) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, IDS=250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, IDS=250µA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | VDS=40V, VGS=0V, TJ=125°C | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 5.5 | 6 | mΩ | VGS=4.5V, IDS=35A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 4 | 4.5 | mΩ | VGS=10V, IDS=50A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | ISD=50A, VGS=0V | 2 | ||
| Reverse Recovery Time | trr | 18 | ns | ISD=50A, dlSD/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 29 | nC | ISD=50A, dlSD/dt=100A/µs | 2 | ||
| Gate Resistance | RG | 1.3 | Ω | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Input Capacitance | Ciss | 3027 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 | ||
| Output Capacitance | Coss | 1513 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 155 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 13 | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 | ||
| Turn-on Rise Time | tr | 21 | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 | ||
| Turn-off Delay Time | td(OFF) | 29 | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 | ||
| Turn-off Fall Time | tf | 9 | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 | ||
| Total Gate Charge | Qg | 29 | nC | VDS=32V, VGS=10V, IDS=50A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS=32V, VGS=10V, IDS=50A | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDS=32V, VGS=10V, IDS=50A | 2 |
CAD (KiCad official)
- Symbol:
ASDM40N80KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm40n80kq-r-etched.step/asdm40n80kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm40n80kq-r.step/asdm40n80kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (8 pp, sha256
b767df999793fc7c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM40N80KQ-R
**ASDsemi** · MOSFETs · TO-252
ASDM40N80KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), with threshold of 1 V min to 2.5 V max at VDS=VGS, IDS=250µA. |
| 2 | D | passive | Drain; 40 V maximum drain-source voltage (VDSS) with 80 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; the 80 A continuous diode forward current (IS) at TC=25°C flows through the body diode from source to drain. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Continuous Drain Current@TC | ID | | | 80 | A | TC=25°C (VGS=10V) | 1 |
| Continuous Drain Current@TC | ID | | | 51 | A | TC=100°C (VGS=10V) | 1 |
| Continuous Drain Current@TA | ID | | | 25 | A | TA=25°C (VGS=10V), footnote ③ | 1 |
| Continuous Drain Current@TA | ID | | | 19 | A | TA=70°C (VGS=10V), footnote ③ | 1 |
| Diode Continuous Forward Current | IS | | | 80 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDP | | | 320 | A | TC=25°C, 300µs pulse (footnote ①) | 1 |
| Maximum Power Dissipation@TC | PD | | | 65 | W | TC=25°C | 1 |
| Maximum Power Dissipation@TC | PD | | | 26 | W | TC=100°C | 1 |
| Maximum Power Dissipation@TA | PD | | | 4.2 | W | TA=25°C, footnote ③ | 1 |
| Maximum Power Dissipation@TA | PD | | | 2.7 | W | TA=70°C, footnote ③ | 1 |
| Avalanche Energy, Single Pulsed | EAS | | | 121 | mJ | Single pulsed (footnote ④) | 1 |
| Thermal Resistance-Junction to Case | RJC | | 2.4 | | °C/W | | 1 |
| Thermal Resistance-Junction to Ambient | RJA | | 62 | | °C/W | footnote ③ (mounted on large heat sink) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, IDS=250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS, IDS=250µA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=40V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | VDS=40V, VGS=0V, TJ=125°C | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 5.5 | 6 | mΩ | VGS=4.5V, IDS=35A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 4 | 4.5 | mΩ | VGS=10V, IDS=50A | 2 |
| Diode Forward Voltage | VSD | | 1.2 | | V | ISD=50A, VGS=0V | 2 |
| Reverse Recovery Time | trr | | 18 | | ns | ISD=50A, dlSD/dt=100A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 29 | | nC | ISD=50A, dlSD/dt=100A/µs | 2 |
| Gate Resistance | RG | | 1.3 | | Ω | VGS=0V, VDS=0V, F=1MHz | 2 |
| Input Capacitance | Ciss | | 3027 | | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 |
| Output Capacitance | Coss | | 1513 | | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 155 | | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) | | 13 | | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 |
| Turn-on Rise Time | tr | | 21 | | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 |
| Turn-off Delay Time | td(OFF) | | 29 | | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 |
| Turn-off Fall Time | tf | | 9 | | ns | VDD=20V, IDS=50A, VGEN=10V, RG=4.7Ω | 2 |
| Total Gate Charge | Qg | | 29 | | nC | VDS=32V, VGS=10V, IDS=50A | 2 |
| Gate-Source Charge | Qgs | | 5 | | nC | VDS=32V, VGS=10V, IDS=50A | 2 |
| Gate-Drain Charge | Qgd | | 9 | | nC | VDS=32V, VGS=10V, IDS=50A | 2 |
## CAD (KiCad official)
- Symbol: `ASDM40N80KQ-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asdm40n80kq-r-etched.step` / `asdm40n80kq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm40n80kq-r.step` / `asdm40n80kq-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835301632831488) (8 pp, sha256 `b767df999793fc7c`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm40n80kq-r-datasheet.pdf)