component
ASDM3401ZB-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM3401ZB-R
ASDsemi · MOSFETs · SOT-23-3L
ASDM3401ZB-R from ASDsemi, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±12 V maximum and threshold VGS(th) of -0.5 V min to -1.5 V max at ID=-250µA. |
| 2 | S | passive | Source; the P-channel MOSFET source terminal, with the body diode conducting from drain to source at VSD of -1 V max at IS=-1A. |
| 3 | D | passive | Drain; rated for VDS of -30 V with continuous drain current of -4.2 A and pulsed drain current of -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID =-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-24V,VGS = 0V | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 2 | |
| Drain-source on-resistance | RDS(on) | 65 | mΩ | VGS =-10V, ID =-4A | 2 | ||
| Drain-source on-resistance | RDS(on) | 75 | mΩ | VGS =-4.5V, ID=-3A | 2 | ||
| Drain-source on-resistance | RDS(on) | 100 | mΩ | VGS =-2.5V, ID=-1A | 2 | ||
| Gate threshold voltage | VGS(th) | -0.5 | -1.5 | V | VDS =VGS, ID =-250µA | 2 | |
| Diode forward voltage | VSD | -1 | V | IS=-1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ASDM3401ZB-R - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
asdm3401zb-r-etched.step/asdm3401zb-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm3401zb-r.step/asdm3401zb-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
14ea13a241e596ea, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM3401ZB-R
**ASDsemi** · MOSFETs · SOT-23-3L
ASDM3401ZB-R from ASDsemi, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±12 V maximum and threshold VGS(th) of -0.5 V min to -1.5 V max at ID=-250µA. |
| 2 | S | passive | Source; the P-channel MOSFET source terminal, with the body diode conducting from drain to source at VSD of -1 V max at IS=-1A. |
| 3 | D | passive | Drain; rated for VDS of -30 V with continuous drain current of -4.2 A and pulsed drain current of -30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID =-250µA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-24V,VGS = 0V | 2 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 2 |
| Drain-source on-resistance | RDS(on) | | | 65 | mΩ | VGS =-10V, ID =-4A | 2 |
| Drain-source on-resistance | RDS(on) | | | 75 | mΩ | VGS =-4.5V, ID=-3A | 2 |
| Drain-source on-resistance | RDS(on) | | | 100 | mΩ | VGS =-2.5V, ID=-1A | 2 |
| Gate threshold voltage | VGS(th) | -0.5 | | -1.5 | V | VDS =VGS, ID =-250µA | 2 |
| Diode forward voltage | VSD | | | -1 | V | IS=-1A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `ASDM3401ZB-R`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `asdm3401zb-r-etched.step` / `asdm3401zb-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm3401zb-r.step` / `asdm3401zb-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904097093464064) (7 pp, sha256 `14ea13a241e596ea`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm3401zb-r-datasheet.pdf)