component
ASDM3401ZA-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
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| docs | 7d ago |
| viewers | 7d ago |
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| asdm3401za-r-etched.step | 7d ago |
| asdm3401za-r-hero.glb | 7d ago |
| asdm3401za-r-hero.overlay.json | 7d ago |
| asdm3401za-r.glb | 7d ago |
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| README.md | 7d ago |
ASDM3401ZA-R
ASDsemi · MOSFETs · SOT-23
ASDM3401ZA-R from ASDsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±12 V and threshold of -0.5 to -1.5 V at ID=-250µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal, with body diode forward voltage VSD of -1 V max at IS=-1A. |
| 3 | D | passive | Drain; P-channel MOSFET drain terminal rated for VDS of -30 V and continuous ID of -4.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Continuous Drain Current | ID | -4.2 | A | 1 | |||
| Power Dissipation | PD | 350 | mW | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | t<5s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID =-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-24V,VGS = 0V | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -0.5 | -1.5 | V | VDS =VGS, ID =-250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 65 | mΩ | VGS =-10V, ID =-4A | 2 | ||
| Drain-source on-resistance | RDS(on) | 75 | mΩ | VGS =-4.5V, ID=-3A | 2 | ||
| Drain-source on-resistance | RDS(on) | 100 | mΩ | VGS =-2.5V,ID=-1A | 2 | ||
| Forward transconductance | gFS | 7 | S | VDS =-5V, ID =-5A | 2 | ||
| Input capacitance | Ciss | 954 | pF | 2 | |||
| Output capacitance | Coss | 115 | pF | 2 | |||
| Reverse transfer capacitance | Crss | 77 | pF | 2 | |||
| Turn-on delay time | td(on) | 6.3 | ns | 2 | |||
| Turn-on rise time | tr | 3.2 | ns | 2 | |||
| Turn-off delay time | td(off) | 38.2 | ns | 2 | |||
| Turn-off fall time | tf | 12 | ns | 2 | |||
| Diode forward voltage | VSD | -1 | V | IS=-1A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ASDM3401ZA-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
asdm3401za-r-etched.step/asdm3401za-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm3401za-r.step/asdm3401za-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (6 pp, sha256
d49f7bd6af55d9c0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).