component

ASDM30N90Q-R

Public Made by Adom

by adom

ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsasdm30n90q-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
asdm30n90q-r / README.md
History Download
Ray Publish 0.1.0 1a3b87b 6h ago

ASDM30N90Q-R

ASDsemi · MOSFETs · DFN5x6-8

ASDM30N90Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin (pins 1-3 are the source); drain-source voltage rated 30 V.
2 S passive Source pin (pins 1-3 are the source); drain-source voltage rated 30 V.
3 S passive Source pin (pins 1-3 are the source); drain-source voltage rated 30 V.
4 G input Gate pin; gate-source voltage maximum ±20 V, threshold 1 to 2.4 V.
5 D passive Drain pin (pins 5-8 are the drain); continuous drain current 90 A at TC=25ºC (package limited).
6 D passive Drain pin (pins 5-8 are the drain); continuous drain current 90 A at TC=25ºC (package limited).
7 D passive Drain pin (pins 5-8 are the drain); continuous drain current 90 A at TC=25ºC (package limited).
8 D passive Drain pin (pins 5-8 are the drain); continuous drain current 90 A at TC=25ºC (package limited).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ASDsemi
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 90 A TC =25ºC 1
Continuous Drain Current ID 40 A TC =100ºC 1
Pulsed Drain Current IDM 360 A 1
Avalanche Current IS 90 A 1
Single Pulse Avalanche Energy EAS 135 mJ L =0.3mH 1
Power Dissipation PD 65 W TC =25ºC 1
Power Dissipation PD 32 W TC =100ºC 1
Junction and Storage Temperature Range TJ, TSTG -55 175 ºC 1
Maximum Junction-to-Case Steady-State RƟJC 2.3 ºC/W 1
Maximum Junction-to-Ambient Steady-State RƟJA 62 ºC/W 1
Drain-Source Breakdown Voltage BVDSS 30 V ID =250µA, VGS =0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS =30V, VGS =0V, TJ =25ºC 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS =30V, VGS =0V, TJ =125ºC 2
Gate-Body Leakage Current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.4 V VDS =VGS, ID =250µA 2
Static Drain-Source On-Resistance RDS(ON) 4.3 5.2 mΩ VGS =10V, ID =30A 2
Static Drain-Source On-Resistance RDS(ON) 6.9 9 mΩ VGS =4.5V, ID =30A 2
Forward Transconductance gFS 16 S VDS =10V, ID =20A 2
Diode Forward Voltage VSD 1 V IS =30A, VGS =0V 2
Maximum Body-Diode Continuous Current IS 90 A 2

CAD (KiCad official)

  • Symbol: ASDM30N90Q-R
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: asdm30n90q-r-etched.step / asdm30n90q-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm30n90q-r.step / asdm30n90q-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ASDsemi datasheet (9 pp, sha256 698c9260355b2f2c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF