component
ASDM30N90KQ-R
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ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM30N90KQ-R
ASDsemi · MOSFETs · TO-252
ASDM30N90KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 1 V min to 2.4 V max at 250 µA. |
| 2 | D | passive | Drain (also the tab); 30 V maximum drain-source voltage and 90 A continuous drain current at TC=25ºC, package limited. |
| 3 | S | passive | Source; connects to the body diode anode, with a maximum body-diode continuous current of 90 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 90 | A | TC =25ºC | 1 | ||
| Continuous Drain Current | ID | 46 | A | TC =100ºC | 1 | ||
| Pulsed Drain Current | IDM | 255 | A | 1 | |||
| Avalanche Current | IS | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 135 | mJ | L =0.3mH | 1 | ||
| Power Dissipation | PD | 65 | W | TC =25ºC | 1 | ||
| Power Dissipation | PD | 32 | W | TC =100ºC | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | ºC | 1 | ||
| Maximum Junction-to-Case Steady-State | RƟJC | 2.3 | ºC/W | 1 | |||
| Maximum Junction-to-Ambient Steady-State | RƟJA | 100 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID =250µA, VGS =0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =30V, VGS =0V, TJ =25ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS =30V, VGS =0V, TJ =125ºC | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.4 | V | VDS =VGS, ID =250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.6 | 4.5 | mΩ | VGS =10V, ID =30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.9 | 9 | mΩ | VGS =4.5V, ID =30A | 2 | |
| Forward Transconductance | gFS | 16 | S | VDS =10V, ID =20A | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | IS =30A, VGS =0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 90 | A | 2 |
CAD (KiCad official)
- Symbol:
ASDM30N90KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm30n90kq-r-etched.step/asdm30n90kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm30n90kq-r.step/asdm30n90kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (9 pp, sha256
c02ed9ffa207ba8a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM30N90KQ-R
**ASDsemi** · MOSFETs · TO-252
ASDM30N90KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 1 V min to 2.4 V max at 250 µA. |
| 2 | D | passive | Drain (also the tab); 30 V maximum drain-source voltage and 90 A continuous drain current at TC=25ºC, package limited. |
| 3 | S | passive | Source; connects to the body diode anode, with a maximum body-diode continuous current of 90 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 90 | A | TC =25ºC | 1 |
| Continuous Drain Current | ID | | | 46 | A | TC =100ºC | 1 |
| Pulsed Drain Current | IDM | | | 255 | A | | 1 |
| Avalanche Current | IS | | | 90 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 135 | mJ | L =0.3mH | 1 |
| Power Dissipation | PD | | | 65 | W | TC =25ºC | 1 |
| Power Dissipation | PD | | | 32 | W | TC =100ºC | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | ºC | | 1 |
| Maximum Junction-to-Case Steady-State | RƟJC | | | 2.3 | ºC/W | | 1 |
| Maximum Junction-to-Ambient Steady-State | RƟJA | | | 100 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID =250µA, VGS =0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS =30V, VGS =0V, TJ =25ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS =30V, VGS =0V, TJ =125ºC | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.4 | V | VDS =VGS, ID =250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.6 | 4.5 | mΩ | VGS =10V, ID =30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 6.9 | 9 | mΩ | VGS =4.5V, ID =30A | 2 |
| Forward Transconductance | gFS | 16 | | | S | VDS =10V, ID =20A | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | IS =30A, VGS =0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 90 | A | | 2 |
## CAD (KiCad official)
- Symbol: `ASDM30N90KQ-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asdm30n90kq-r-etched.step` / `asdm30n90kq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm30n90kq-r.step` / `asdm30n90kq-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904094567817216) (9 pp, sha256 `c02ed9ffa207ba8a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm30n90kq-r-datasheet.pdf)