ASDM30N150Q-R

{
  "schema_version": 1,
  "type": "component",
  "slug": "asdm30n150q-r",
  "title": "ASDM30N150Q-R",
  "brief": "ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "asdm30n150q-r",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "ASDM30N150Q-R",
    "manufacturer": "ASDsemi",
    "package": "DFN5x6-8",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225330871820288",
    "parts": {
      "symbol": "asdm30n150q-r.kicad_sym",
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      "model_3d_step_plain": "asdm30n150q-r.step",
      "lbr": "asdm30n150q-r.lbr"
    },
    "distributor_links": {
      "lcsc": "C2972857"
    },
    "distributor_check": {
      "checked_at": "2026-10-17T05:54:26Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature)."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
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      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature)."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate pin; gate-to-source voltage rating is ±20 V with threshold VGS(TH) 1.2 V min to 2.4 V max at 250 uA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The package drawing on page 8 shows a large exposed pad (TYPE I) or a split pad (TYPE II, 2xD2). The; Source and drain are bidirectional power terminals. I typed them as passive because the datasheet gi",
          "exposed pad 9 added from the footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "at": "2026-10-17T05:54:10"
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        "sha256": "25ab167329ff45ff",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "ASDsemi",
      "Package": "DFN5x6-8",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
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        {
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        {
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        {
          "name": "Continuous drain current (@Ta=70oC)",
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        {
          "name": "Gate to source voltage",
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        },
        {
          "name": "Single pulsed avalanche energy",
          "symbol": "EAS",
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          "unit": "mJ",
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          "conditions": "note 2: L=0.5mH, IAS=48A, VDD=30V, RG=25ohm, starting TJ=25oC",
          "source_page": 1,
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        },
        {
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        },
        {
          "name": "Peak diode recovery dv/dt",
          "symbol": "dv/dt",
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          "unit": "V/ns",
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        {
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        {
          "name": "Thermal resistance, Junction to case",
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          "name": "Drain to source leakage current",
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          "name": "Drain to source leakage current",
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          "unit": "uA",
          "min": null,
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          "conditions": "VDS=24V, TJ=125oC",
          "source_page": 2,
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        },
        {
          "name": "Gate to source leakage current, forward",
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          "unit": "nA",
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        {
          "name": "Gate to source leakage current, reverse",
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          "name": "Gate threshold voltage",
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        },
        {
          "name": "Drain to source on state resistance",
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          "conditions": "VGS=10V, ID=30A, TJ=25oC",
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        },
        {
          "name": "Drain to source on state resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mOhm",
          "min": null,
          "typ": 3.4,
          "max": 4.5,
          "conditions": "VGS=4.5V, ID=30A, TJ=25oC",
          "source_page": 2,
          "source": "datasheet"
        },
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          "name": "Continuous source current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "Integral reverse p-n junction diode in the MOSFET",
          "source_page": 2,
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          "name": "Pulsed source current",
          "symbol": "ISM",
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          "min": null,
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          "max": 600,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage drop",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.4,
          "conditions": "IS=45A, VGS=0V",
          "source_page": 2,
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  "discovery_pitch": "ASDM30N150Q-R (ASDsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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