component
ASDM30N150Q-R
Public Made by Adomby adom
ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM30N150Q-R
ASDsemi · MOSFETs · DFN5x6-8
ASDM30N150Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 2 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 3 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 4 | G | input | Gate pin; gate-to-source voltage rating is ±20 V with threshold VGS(TH) 1.2 V min to 2.4 V max at 250 uA. |
| 5 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 6 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 7 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 8 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 30 | V | 1 | |||
| Continuous drain current (@Tc=25oC) | ID | 150 | A | Tc=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (@Tc=100oC) | ID | 78 | A | Tc=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 600 | A | note 1 | 1 | ||
| Continuous drain current (@Ta=25oC) | IDSM | 30 | A | Ta=25oC | 1 | ||
| Continuous drain current (@Ta=70oC) | IDSM | 24 | A | Ta=70oC | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 576 | mJ | note 2: L=0.5mH, IAS=48A, VDD=30V, RG=25ohm, starting TJ=25oC | 1 | ||
| Repetitive avalanche energy | EAR | 57 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3: ISD<=30A, di/dt=100A/us, VDD<=BVDSS, starting TJ=25oC | 1 | ||
| Total power dissipation (@Tc=25oC) | PD | 43 | W | Tc=25oC | 1 | ||
| Total power dissipation (@Ta=25oC) | PD | 2.6 | W | Ta=25oC | 1 | ||
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 1.8 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 62 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=24V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1.2 | 2.4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.7 | 2.5 | mOhm | VGS=10V, ID=30A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 3.4 | 4.5 | mOhm | VGS=4.5V, ID=30A, TJ=25oC | 2 | |
| Continuous source current | IS | 150 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 600 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=45A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ASDM30N150Q-R - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
asdm30n150q-r-etched.step/asdm30n150q-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm30n150q-r.step/asdm30n150q-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (9 pp, sha256
25ab167329ff45ff, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM30N150Q-R
**ASDsemi** · MOSFETs · DFN5x6-8
ASDM30N150Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 2 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 3 | S | passive | Source pin (pins 1-3 are the MOSFET source); VDSS 30 V, continuous drain current 150 A (Tc=25°C, limited by junction temperature). |
| 4 | G | input | Gate pin; gate-to-source voltage rating is ±20 V with threshold VGS(TH) 1.2 V min to 2.4 V max at 250 uA. |
| 5 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 6 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 7 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 8 | D | passive | Drain pin (pins 5-8 are the MOSFET drain); VDSS 30 V, pulsed drain current 600 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | | | 30 | V | | 1 |
| Continuous drain current (@Tc=25oC) | ID | | | 150 | A | Tc=25oC; drain current limited by junction temperature | 1 |
| Continuous drain current (@Tc=100oC) | ID | | | 78 | A | Tc=100oC; drain current limited by junction temperature | 1 |
| Drain current pulsed | IDM | | | 600 | A | note 1 | 1 |
| Continuous drain current (@Ta=25oC) | IDSM | | | 30 | A | Ta=25oC | 1 |
| Continuous drain current (@Ta=70oC) | IDSM | | | 24 | A | Ta=70oC | 1 |
| Gate to source voltage | VGS | -20 | | 20 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 576 | mJ | note 2: L=0.5mH, IAS=48A, VDD=30V, RG=25ohm, starting TJ=25oC | 1 |
| Repetitive avalanche energy | EAR | | | 57 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3: ISD<=30A, di/dt=100A/us, VDD<=BVDSS, starting TJ=25oC | 1 |
| Total power dissipation (@Tc=25oC) | PD | | | 43 | W | Tc=25oC | 1 |
| Total power dissipation (@Ta=25oC) | PD | | | 2.6 | W | Ta=25oC | 1 |
| Operating junction temperature & storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Thermal resistance, Junction to case | Rthjc | | | 1.8 | oC/W | | 1 |
| Thermal resistance, Junction to ambient | Rthja | | | 62 | oC/W | | 1 |
| Drain to source breakdown voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=30V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=24V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.2 | | 2.4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 1.7 | 2.5 | mOhm | VGS=10V, ID=30A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | 3.4 | 4.5 | mOhm | VGS=4.5V, ID=30A, TJ=25oC | 2 |
| Continuous source current | IS | | | 150 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 600 | A | | 2 |
| Diode forward voltage drop | VSD | | | 1.4 | V | IS=45A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `ASDM30N150Q-R`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `asdm30n150q-r-etched.step` / `asdm30n150q-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm30n150q-r.step` / `asdm30n150q-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225330871820288) (9 pp, sha256 `25ab167329ff45ff`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm30n150q-r-datasheet.pdf)