component
ASDM30N100KQ-R
Public Made by Adomby adom
Ascend MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM30N100KQ-R
Ascend · MOSFETs · TO-252
ASDM30N100KQ-R from Ascend, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum. |
| 2 | D | passive | Drain; drain-source voltage 30 V maximum and continuous drain current 100 A at TC=25℃ (package limited to 85 A). |
| 3 | S | passive | Source; continuous source (body diode) current up to 100 A and pulsed 400 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 100 | A | VGS @ 10V, TC=25℃; package limitation current 85A | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 65 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current 10s | ID@TA=25℃ | 27.3 | A | VGS @ 10V, TA=25℃, 10s | 1 | ||
| Continuous Drain Current Steady State | ID@TA=25℃ | 17.3 | A | VGS @ 10V, TA=25℃, steady state | 1 | ||
| Continuous Drain Current 10s | ID@TA=70℃ | 21.8 | A | VGS @ 10V, TA=70℃, 10s | 1 | ||
| Continuous Drain Current Steady State | ID@TA=70℃ | 14 | A | VGS @ 10V, TA=70℃, steady state | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 175 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=53A | 1 | ||
| Avalanche Current | IAS | 53 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 79 | W | TC=25℃ | 1 | ||
| Total Power Dissipation 10s | PD@TA=25℃ | 5 | W | TA=25℃, 10s | 1 | ||
| Total Power Dissipation Steady State | PD@TA=25℃ | 2 | W | TA=25℃, steady state | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.3 | 4 | mΩ | VGS=10V , ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | 6 | mΩ | VGS=4.5V , ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 100 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 400 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.0213 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 5.73 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 26.5 | S | VDS=5V , ID=30A | 2 |
CAD (KiCad official)
- Symbol:
ASDM30N100KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm30n100kq-r-etched.step/asdm30n100kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm30n100kq-r.step/asdm30n100kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Ascend datasheet (7 pp, sha256
6a44e89191448a3e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM30N100KQ-R
**Ascend** · MOSFETs · TO-252
ASDM30N100KQ-R from Ascend, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum. |
| 2 | D | passive | Drain; drain-source voltage 30 V maximum and continuous drain current 100 A at TC=25℃ (package limited to 85 A). |
| 3 | S | passive | Source; continuous source (body diode) current up to 100 A and pulsed 400 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 100 | A | VGS @ 10V, TC=25℃; package limitation current 85A | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 65 | A | VGS @ 10V, TC=100℃ | 1 |
| Continuous Drain Current 10s | ID@TA=25℃ | | | 27.3 | A | VGS @ 10V, TA=25℃, 10s | 1 |
| Continuous Drain Current Steady State | ID@TA=25℃ | | | 17.3 | A | VGS @ 10V, TA=25℃, steady state | 1 |
| Continuous Drain Current 10s | ID@TA=70℃ | | | 21.8 | A | VGS @ 10V, TA=70℃, 10s | 1 |
| Continuous Drain Current Steady State | ID@TA=70℃ | | | 14 | A | VGS @ 10V, TA=70℃, steady state | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 175 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=53A | 1 |
| Avalanche Current | IAS | | | 53 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 79 | W | TC=25℃ | 1 |
| Total Power Dissipation 10s | PD@TA=25℃ | | | 5 | W | TA=25℃, 10s | 1 |
| Total Power Dissipation Steady State | PD@TA=25℃ | | | 2 | W | TA=25℃, steady state | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 25 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.8 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.3 | 4 | mΩ | VGS=10V , ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5 | 6 | mΩ | VGS=4.5V , ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS | | | 100 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM | | | 400 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.0213 | | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 5.73 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 26.5 | | S | VDS=5V , ID=30A | 2 |
## CAD (KiCad official)
- Symbol: `ASDM30N100KQ-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asdm30n100kq-r-etched.step` / `asdm30n100kq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm30n100kq-r.step` / `asdm30n100kq-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Ascend datasheet](docs/asdm30n100kq-r-datasheet.pdf) (7 pp, sha256 `6a44e89191448a3e`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm30n100kq-r-datasheet.pdf)