component
ASDM3010S-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownASDM3010S-R
ASDsemi · MOSFETs · SOP-8
ASDM3010S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 30 V, ID 9 A at TA=25°C). |
| 2 | G1 | input | Gate of MOSFET 1, 5 V logic level control, VGS rated ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 30 V, ID 9 A at TA=25°C). |
| 4 | G2 | input | Gate of MOSFET 2, 5 V logic level control, VGS rated ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2, drain-source breakdown voltage 30 V. |
| 6 | D2 | passive | Drain of MOSFET 2, drain-source breakdown voltage 30 V. |
| 7 | D1 | passive | Drain of MOSFET 1, drain-source breakdown voltage 30 V. |
| 8 | D1 | passive | Drain of MOSFET 1, drain-source breakdown voltage 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | 1 | |||
| Diode continuous forward current | IS | 2.3 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | 9 | A | VGS=10V, TA=25°C | 1 | ||
| Continuous drain current | ID | 5 | A | VGS=10V, TA=70°C | 1 | ||
| Pulse drain current | IDM | 30 | A | TA=25°C, pulse tested | 1 | ||
| Avalanche energy, single pulsed | EAS | 9 | mJ | single pulsed | 1 | ||
| Maximum power dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 50 | °C/W | 1 | |||
| Thermal Resistance-Junction to Lead | RθJL | 40 | °C/W | 1 | |||
| Static drain-source on-resistance | RDS(on) | 15.5 | mΩ | VGS=10 V | 1 |
CAD (KiCad official)
- Symbol:
ASDM3010S-R - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
asdm3010s-r-etched.step/asdm3010s-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm3010s-r.step/asdm3010s-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
55becab907aeb2c8, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).