component
ASDM20N100Q-R
Public Made by Adomby adom
ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM20N100Q-R
ASDsemi · MOSFETs · DFN5x6-8
ASDM20N100Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1, marked with dot on top view). |
| 2 | S | passive | Source of the N-channel MOSFET. |
| 3 | S | passive | Source of the N-channel MOSFET. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage max ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 100 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 115 | A | TA=70°C | 1 | ||
| Power Dissipation | PD | 83 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 33 | W | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | 1 | |||
| Avalanche Current | IAR | 48 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 110.4 | mJ | L=0.1mH | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient t ≤ 10s | RθJA | 6 | 9 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient Steady State | RθJA | 12 | 14 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead Steady State | RθJL | 3 | 5 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID = 250uA, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gFS | 70 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A,VGS=245V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 150 | A | 2 | |||
| Input Capacitance | Ciss | 6384 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 2470 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 325 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 5.15 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg (10V) | 25 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Total Gate Charge | Qg (4.5V) | 12.5 | nC | 2 | |||
| Gate-Source Charge | Qgs | 7.21 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 10.3 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 11 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 8.8 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 30.8 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 9.9 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 22 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 58 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
ASDM20N100Q-R - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
asdm20n100q-r-etched.step/asdm20n100q-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm20n100q-r.step/asdm20n100q-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
e383bf426241cc3e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM20N100Q-R
**ASDsemi** · MOSFETs · DFN5x6-8
ASDM20N100Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1, marked with dot on top view). |
| 2 | S | passive | Source of the N-channel MOSFET. |
| 3 | S | passive | Source of the N-channel MOSFET. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage max ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDS max 20 V, continuous ID 100 A at TA=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 100 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 115 | A | TA=70°C | 1 |
| Power Dissipation | PD | | | 83 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 33 | W | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | | 1 |
| Avalanche Current | IAR | | | 48 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 110.4 | mJ | L=0.1mH | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient t ≤ 10s | RθJA | | 6 | 9 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient Steady State | RθJA | | 12 | 14 | °C/W | Steady State | 1 |
| Maximum Junction-to-Lead Steady State | RθJL | | 3 | 5 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | ID = 250uA, VGS = 0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gFS | 70 | | | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD | | 0.72 | 1 | V | IS=1A,VGS=245V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 150 | A | | 2 |
| Input Capacitance | Ciss | | 6384 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 2470 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 325 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Resistance | Rg | | 5.15 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg (10V) | | 25 | | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge | Qg (4.5V) | | 12.5 | | nC | | 2 |
| Gate-Source Charge | Qgs | | 7.21 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 10.3 | | nC | | 2 |
| Turn-On Delay Time | tD(on) | | 11 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 8.8 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 30.8 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 9.9 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 22 | | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 58 | | nC | IF=18A, dI/dt=500A/µs | 2 |
## CAD (KiCad official)
- Symbol: `ASDM20N100Q-R`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `asdm20n100q-r-etched.step` / `asdm20n100q-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm20n100q-r.step` / `asdm20n100q-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225631172079616) (7 pp, sha256 `e383bf426241cc3e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm20n100q-r-datasheet.pdf)