component
ASDM100R160NKQ-R
Public Made by Adomby adom
ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM100R160NKQ-R
ASDsemi · MOSFETs · TO-252
ASDM100R160NKQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold VGS(th) 1 V min, 1.8 V typ, 3 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain (short center lead, connected to the exposed tab); drain-source voltage 100 V max, continuous drain current 45 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous current 45 A max, with diode forward voltage 1.3 V max at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current | ID | 45 | A | TC=25℃ | 1 | ||
| Drain current | ID | 28.5 | A | TC=100℃ | 1 | ||
| Pulsed drain current | IDM | 180 | A | 1 | |||
| Avalanche energy | EAS | 81 | mJ | 1 | |||
| Total power dissipation | PD | 72 | W | Tc=25℃ | 1 | ||
| Total power dissipation | PD | 28.8 | W | Tc=100℃ | 1 | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient | RθJA | 15 | 20 | ℃/W | t≤10S | 1 | |
| Thermal resistance junction-to-ambient | RθJA | 40 | 50 | ℃/W | Steady-State | 1 | |
| Thermal resistance junction-to-case | RθJC | 1.35 | 1.7 | ℃/W | Steady-State | 1 | |
| Gate threshold voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Static drain-source on-resistance | RDS(ON) | 14 | 17 | mΩ | VGS= 10V, ID=20A | 2 | |
| Static drain-source on-resistance | RDS(ON) | 17 | 21.5 | mΩ | VGS= 4.5V, ID=20A | 2 |
CAD (KiCad official)
- Symbol:
ASDM100R160NKQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm100r160nkq-r-etched.step/asdm100r160nkq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm100r160nkq-r.step/asdm100r160nkq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
a093a1366860f669, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).