# ASDM100R090NP-T

**Ascend** · MOSFETs · TO-220

ASDM100R090NP-T from Ascend, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limit is +20/-12 V, with a typical threshold of 1.8 V (1 to 2.5 V) at ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated 100 V, with continuous current of 75 A at TC=25℃ (silicon limited). |
| 3 | S | passive | Source; connects to the body diode anode and carries the full drain current (75 A at TC=25℃, 38 A at TC=100℃). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate to Source Voltage | VGS | -12 |  | 20 | V |  | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 75 | A | TC=25℃ | 1 |
| Continuous Drain Current (Silicon Limited) | ID |  |  | 38 | A | TC=100℃ | 1 |
| Avalanche Energy, Single Pulse | EAS |  |  | 80 | mJ | L=0.1mH, TC=25℃ | 1 |
| Operating and Storage Temperature | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient (steady state) | RθJA |  |  | 75 | ℃/W | steady state | 1 |
| Thermal Resistance Junction-Ambient (t≤10s) | RθJA |  |  | 40 | ℃/W | t≤10s | 1 |
| Thermal Resistance Junction-Lead | RθJL |  |  | 23 | ℃/W |  | 1 |
| Drain to Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VGS=VDS, ID=250µA | 2 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VGS=0V, VDS=95V, Tj=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | µA | VGS=0V, VDS=95V, Tj=125℃ | 2 |
| Drain to Source on Resistance | RDS(on) |  | 9 | 12 | mΩ | VGS=10V, ID=14A | 2 |
| Drain to Source on Resistance | RDS(on) |  | 12 | 15.5 | mΩ | VGS=4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | VGS=0V, IF=14A | 2 |

## CAD (KiCad official)

- Symbol: `ASDM100R090NP-T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `asdm100r090np-t-etched.step` / `asdm100r090np-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm100r090np-t.step` / `asdm100r090np-t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Ascend datasheet](docs/asdm100r090np-t-datasheet.pdf) (8 pp, sha256 `9899b05bddf17817`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asdm100r090np-t-datasheet.pdf)