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Contents

README

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ASDM100N15KQ-R

Ascend · MOSFETs · TO-252

ASDM100N15KQ-R from Ascend, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20 V maximum, threshold 1.0 to 3.0 V typ 1.6 V at ID=250μA.
2 D passive Drain (also the tab); VDSS 100 V, continuous 15 A at TC=25℃, pulsed 60 A.
3 S passive Source; continuous body-diode forward current 15 A, pulsed 60 A.

Key specifications

Parameter Value
Manufacturer Ascend
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V, TJ=25℃ 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 3 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 95 110 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(on) 100 130 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 2 S VGS=5V, ID=4A 2
Maximum Continuous Drain to Source Diode Forward Current IS 15 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 60 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=10A 2
Drain-Source Voltage VDSS 100 V TC=25℃ 1
Gate-Source Voltage VGSS -20 20 V TC=25℃ 1
Continuous Drain Current ID 15 A TC = 25℃ 1
Continuous Drain Current ID 10 A TC = 100℃ 1
Pulsed Drain Current IDM 60 A note1 1
Power Dissipation PD 55 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 2.72 ℃/W 1
Input Capacitance Ciss 932 pF VDS=50V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 37 pF VDS=50V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 21 pF VDS=50V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 19.2 nC VDS=80V, ID=10A 2
Gate-Source Charge Qgs 3.4 nC VDS=80V, ID=10A 2
Gate-Drain (Miller) Charge Qgd 6.1 nC VDS=80V, ID=10A 2
Turn-on Delay Time td(on) 12.6 ns VGS=10V, VDD=50V, RL=2.8Ω, RREN=6Ω, ID=10A 2
Turn-on Rise Time tr 6 ns VGS=10V, VDD=50V, RL=2.8Ω, RREN=6Ω, ID=10A 2
Turn-off Delay Time td(off) 32.5 ns VGS=10V, VDD=50V, RL=2.8Ω, RREN=6Ω, ID=10A 2
Turn-off Fall Time tf 4.3 ns VGS=10V, VDD=50V, RL=2.8Ω, RREN=6Ω, ID=10A 2

CAD (KiCad official)

  • Symbol: ASDM100N15KQ-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: asdm100n15kq-r-etched.step / asdm100n15kq-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm100n15kq-r.step / asdm100n15kq-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Ascend datasheet (7 pp, sha256 ac2cc5be7a3992ba, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF