component
ASD80R750E
Public Made by Adomby adom
ANHI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASD80R750E
ANHI · MOSFETs · TO-252
ASD80R750E from ANHI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control pin of the N-channel MOSFET; VGS is rated at ±30 V static with threshold Vth of 2.8 to 4.2 V. |
| 2 | Drain | passive | Drain pin, also connected to the tab; VDS breakdown is 800 V min and continuous drain current is 8.5 A at TC=25°C. |
| 3 | Source | passive | Source pin of the N-channel MOSFET, connected to the body diode anode and the return path for drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.8 | 4.2 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=800V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 620 | 750 | mΩ | VGS=10V, ID=6A, Tj=25°C | 4 | |
| Continuous drain current | ID | 8.5 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 35 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 88 | mJ | Tc=25℃,VDD=50V, Iav=4.2A, L=10mH, RG=25Ω | 2 | ||
| Avalanche current, single pulse | IAR | 4.2 | A | Tc=25℃,VDD=50V, L=10mH, RG=25Ω | 2 | ||
| Gate source voltage (static) | VGS | -30 | 30 | V | static; | 2 | |
| Power dissipation (TO252&263) | Ptot | 150 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Soldering temperature | TL | 260 | °C | Distance of 1.6mm from case for 10s | 2 | ||
| Reverse diode dv/dt | dv/dt | 4 | V/ns | VDS=0...400V, ISD<=8A, Tj=25°C | 2 | ||
| Thermal resistance, junction-case (TO252&263) | RthJC | 1.1 | °C/W | 3 | |||
| Thermal resistance, junction-ambient (TO252&263) | RthJA | 62 | °C/W | device on PCB, minimal footprint | 3 | ||
| Gate resistance (Intrinsic) | RG | 25 | Ω | f=1MHz, open drain | 4 | ||
| Input capacitance | Ciss | 850.8 | pF | VGS=0V, VDS=100V, f=1MHz | 4 | ||
| Output capacitance | Coss | 34.4 | pF | VGS=0V, VDS=100V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Crss | 0.92 | pF | VGS=0V, VDS=100V, f=1MHz | 4 | ||
| Turn-on delay time | td(on) | 40.6 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 | ||
| Rise time | tr | 34.8 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 | ||
| Turn-off delay time | td(off) | 128 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 | ||
| Fall time | tf | 31 | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 | ||
| Gate to source charge | Qgs | 5 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 | ||
| Gate to drain charge | Qgd | 6.6 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 | ||
| Gate charge total | Qg | 18.5 | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 | ||
| Diode forward voltage | VSD | 0.75 | V | VGS=0V, IF=1A, Tj=25°C | 5 | ||
| Reverse recovery time | trr | 266.5 | ns | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 | ||
| Reverse recovery charge | Qrr | 2.2 | uC | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 | ||
| Peak reverse recovery current | Irrm | 14 | A | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 |
CAD (KiCad official)
- Symbol:
ASD80R750E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asd80r750e-etched.step/asd80r750e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asd80r750e.step/asd80r750e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (12 pp, sha256
17e7a6e1602f4ec1, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASD80R750E
**ANHI** · MOSFETs · TO-252
ASD80R750E from ANHI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control pin of the N-channel MOSFET; VGS is rated at ±30 V static with threshold Vth of 2.8 to 4.2 V. |
| 2 | Drain | passive | Drain pin, also connected to the tab; VDS breakdown is 800 V min and continuous drain current is 8.5 A at TC=25°C. |
| 3 | Source | passive | Source pin of the N-channel MOSFET, connected to the body diode anode and the return path for drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 | | | V | VGS=0V, ID=250uA | 4 |
| Gate threshold voltage | V(GS)th | 2.8 | | 4.2 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | uA | VDS=800V, VGS=0V, Tj=25°C | 4 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) | | 620 | 750 | mΩ | VGS=10V, ID=6A, Tj=25°C | 4 |
| Continuous drain current | ID | | | 8.5 | A | TC=25°C | 2 |
| Pulsed drain current | ID,pulse | | | 35 | A | TC=25°C | 2 |
| Avalanche energy, single pulse | EAS | | | 88 | mJ | Tc=25℃,VDD=50V, Iav=4.2A, L=10mH, RG=25Ω | 2 |
| Avalanche current, single pulse | IAR | | | 4.2 | A | Tc=25℃,VDD=50V, L=10mH, RG=25Ω | 2 |
| Gate source voltage (static) | VGS | -30 | | 30 | V | static; | 2 |
| Power dissipation (TO252&263) | Ptot | | | 150 | W | TC=25°C | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Operating junction temperature | Tj | -55 | | 150 | °C | | 2 |
| Soldering temperature | TL | | | 260 | °C | Distance of 1.6mm from case for 10s | 2 |
| Reverse diode dv/dt | dv/dt | | | 4 | V/ns | VDS=0...400V, ISD<=8A, Tj=25°C | 2 |
| Thermal resistance, junction-case (TO252&263) | RthJC | | | 1.1 | °C/W | | 3 |
| Thermal resistance, junction-ambient (TO252&263) | RthJA | | | 62 | °C/W | device on PCB, minimal footprint | 3 |
| Gate resistance (Intrinsic) | RG | | 25 | | Ω | f=1MHz, open drain | 4 |
| Input capacitance | Ciss | | 850.8 | | pF | VGS=0V, VDS=100V, f=1MHz | 4 |
| Output capacitance | Coss | | 34.4 | | pF | VGS=0V, VDS=100V, f=1MHz | 4 |
| Reverse transfer capacitance | Crss | | 0.92 | | pF | VGS=0V, VDS=100V, f=1MHz | 4 |
| Turn-on delay time | td(on) | | 40.6 | | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 |
| Rise time | tr | | 34.8 | | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 |
| Turn-off delay time | td(off) | | 128 | | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 |
| Fall time | tf | | 31 | | ns | VDD=400V,VGS=10V,ID=4.1A, RG=50Ω | 4 |
| Gate to source charge | Qgs | | 5 | | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 |
| Gate to drain charge | Qgd | | 6.6 | | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 |
| Gate charge total | Qg | | 18.5 | | nC | VDD=400V, ID=4.1A, VGS=0 to 10V | 4 |
| Diode forward voltage | VSD | | 0.75 | | V | VGS=0V, IF=1A, Tj=25°C | 5 |
| Reverse recovery time | trr | | 266.5 | | ns | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr | | 2.2 | | uC | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 |
| Peak reverse recovery current | Irrm | | 14 | | A | VR=400V, IF=4.1A, diF/dt=100A/µs | 5 |
## CAD (KiCad official)
- Symbol: `ASD80R750E`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asd80r750e-etched.step` / `asd80r750e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asd80r750e.step` / `asd80r750e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ANHI datasheet](docs/asd80r750e-datasheet.pdf) (12 pp, sha256 `17e7a6e1602f4ec1`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asd80r750e-datasheet.pdf)