# ASB80R750E

**ANHI** · MOSFETs · TO-263

ASB80R750E from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input of the N-channel MOSFET, with a gate threshold voltage of 2.8 to 4.2 V and a static gate-source rating of ±30 V. |
| 2 | D | passive | Drain, also connected to the tab, with drain-source breakdown voltage of at least 800 V and a continuous drain current of 8.5 A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the return for the gate drive and the body diode anode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `ASB80R750E`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `asb80r750e-etched.step` / `asb80r750e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asb80r750e.step` / `asb80r750e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ANHI datasheet](docs/asb80r750e-datasheet.pdf) (12 pp, sha256 `17e7a6e1602f4ec1`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asb80r750e-datasheet.pdf)