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ASB65R120EFD

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ANHI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ASB65R120EFD

ANHI · MOSFETs · TO-263

ASB65R120EFD from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input of the N-channel MOSFET with a threshold of 3 to 5 V and a static VGS rating of ±20 V.
2 Drain passive Drain terminal, also connected to the tab, with V(BR)DSS of 655 V minimum and continuous ID of 30 A at TC=25°C.
3 Source passive Source terminal of the MOSFET, which is the return for the drain current and the body diode.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 30 A TC=25°C 2
Pulsed drain current ID,pulse 90 A TC=25°C 2
Avalanche energy, single pulse EAS 1216 mJ Tc=25℃,VDD=50V, L=10mH, RG=25Ω 2
Avalanche current, single pulse IAR 10.9 A Tc=25℃,VDD=50V,L=10mH, RG=25Ω 2
MOSFET dv/dt ruggedness dv/dt 36.2 V/ns VDS=0...400V 2
Gate source voltage (static) VGS -20 20 V static; 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Reverse diode dv/dt dv/dt 50 V/ns VDS=400V, ISD<= ID, Tj=25°C 2
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 3 5 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 2 uA VDS=650V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS -100 100 nA VGS=+/-30V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.105 0.12 Ω VGS=10V, ID=14A, Tj=25°C 4
Thermal resistance, junction - case RthJC 0.45 °C/W 3
Thermal resistance, junction - ambient RthJA 57 °C/W device on PCB, minimal footprint 3
Transconductance Gfs 29.2 S VDS=20V, ID=15A 4
Gate resistance (Intrinsic) RG 12.6 Ω f=1MHz, open drain 4
Input capacitance Ciss 2657 pF VGS=0V, VDS=100V, f=1MHz 4
Output capacitance Coss 89 pF VGS=0V, VDS=100V, f=1MHz 4
Reverse transfer capacitance Crss 2 pF VGS=0V, VDS=100V, f=1MHz 4
Turn-on delay time td(on) 29.6 ns VDD=400V,VGS=10V,ID=19A, RG=2Ω; see table 9 4
Rise time tr 31.3 ns VDD=400V,VGS=10V,ID=19A, RG=2Ω; see table 9 4
Turn-off delay time td(off) 94.6 ns VDD=400V,VGS=10V,ID=19A, RG=2Ω; see table 9 4
Fall time tf 9.1 ns VDD=400V,VGS=10V,ID=19A, RG=2Ω; see table 9 4
Gate to source charge Qgs 15 nC VDD=400V, ID=19A, VGS=0 to 10V 4
Gate to drain charge Qgd 20.2 nC VDD=400V, ID=19A, VGS=0 to 10V 4
Gate charge total Qg 55.4 nC VDD=400V, ID=19A, VGS=0 to 10V 4
Gate plateau voltage Vplateau 5.9 V VDD=400V, ID=19A, VGS=0 to 10V 4
Diode forward voltage VSD 0.67 V VGS=0V, IF=1A, Tj=25°C 5
Reverse recovery time trr 136.7 ns VR=400V, IF=17A,diF/dt=100A/µs; see table 8 5
Reverse recovery charge Qrr 0.741 uC VR=400V, IF=17A,diF/dt=100A/µs; see table 8 5
Peak reverse recovery current Irrm 10.28 A VR=400V, IF=17A,diF/dt=100A/µs; see table 8 5

CAD (KiCad official)

  • Symbol: ASB65R120EFD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: asb65r120efd-etched.step / asb65r120efd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asb65r120efd.step / asb65r120efd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (14 pp, sha256 3087d687f6272ef2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF