component
ASA65R550E
Public Made by Adomby adom
ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+318−26@@ -1,8 +1,11 @@ {+ "schema_version": 1,+ "type": "component", "slug": "asa65r550e",+ "title": "ASA65R550E",+ "brief": "ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors",@@ -10,26 +13,6 @@ "factory-2.0.0", "extractor-text" ],- "dependencies": {},- "hero": {- "type": "image",- "path": "docs/hero.png"- },- "files": [- "page.json",- "README.md",- "asa65r550e.kicad_sym",- "asa65r550e.kicad_mod",- "asa65r550e.glb",- "asa65r550e.step",- "asa65r550e.lbr",- "docs/hero.png",- "docs/asa65r550e-datasheet.pdf",- "viewers/symbol.html",- "viewers/footprint.html",- "asa65r550e-hero.glb",- "asa65r550e-hero.overlay.json"- ], "component": { "mpn": "ASA65R550E", "manufacturer": "ANHI",@@ -139,10 +122,319 @@ } ] },- "visibility": "public",- "org": "adom",+ "metadata": {+ "specs": {+ "Manufacturer": "ANHI",+ "Package": "TO-220F",+ "Category": "Transistors/Thyristors",+ "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b81f0cc1e2a8a62b66d3da6d9197d9a6466c2c32eed0819f32527ae9b9fb912c",+ "rows": [+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 624,+ "conditions": "VDD=50V; L=49.9mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, repetitive",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 123,+ "conditions": "VDD=50V; L=49.9mH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, single pulse",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "VDS=0...150V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage (static)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "static;",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage (dynamic)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "AC (f>1 Hz)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 178.1,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous diode forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 48,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 151,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum diode commutation speed",+ "symbol": "diF/dt",+ "kind": "absolute_maximum",+ "unit": "A/s",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 655,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=10mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "V(GS)th",+ "kind": "electrical",+ "unit": "V",+ "min": 2.8,+ "typ": null,+ "max": 4.2,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS=650V, VGS=0V, Tj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30V, VDS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.5,+ "max": 0.55,+ "conditions": "VGS=10V, ID=4A, Tj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - case (TO220 FullPAK)",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 3.65,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient (TO220 FullPAK)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "device on PCB, minimal footprint",+ "source_page": 3,+ "source": "datasheet"+ }+ ]+ }+ },+ "variants": [],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "asa65r550e"+ ],+ "discovery_pitch": "ASA65R550E (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.", "author": { "name": "Ray", "email": "[email protected]"- }-}+ },+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "asa65r550e.kicad_sym",+ "asa65r550e.kicad_mod",+ "asa65r550e.glb",+ "asa65r550e.step",+ "asa65r550e.lbr",+ "docs/hero.png",+ "docs/asa65r550e-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "asa65r550e-hero.glb",+ "asa65r550e-hero.overlay.json"+ ]+}