← Commit history

asa65r550e: factory component page (tier=lcsc)

Ray ·7f657124f8 ·4h ago ·parent 688b549
1 file changed +318−26
page.json+318−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "asa65r550e",+  "title": "ASA65R550E",+  "brief": "ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "asa65r550e.kicad_sym",-    "asa65r550e.kicad_mod",-    "asa65r550e.glb",-    "asa65r550e.step",-    "asa65r550e.lbr",-    "docs/hero.png",-    "docs/asa65r550e-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "asa65r550e-hero.glb",-    "asa65r550e-hero.overlay.json"-  ],   "component": {     "mpn": "ASA65R550E",     "manufacturer": "ANHI",@@ -139,10 +122,319 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "ANHI",+      "Package": "TO-220F",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "b81f0cc1e2a8a62b66d3da6d9197d9a6466c2c32eed0819f32527ae9b9fb912c",+      "rows": [+        {+          "name": "Continuous drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 8,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed drain current",+          "symbol": "ID,pulse",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche energy, single pulse",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 624,+          "conditions": "VDD=50V; L=49.9mH",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche energy, repetitive",+          "symbol": "EAR",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 123,+          "conditions": "VDD=50V; L=49.9mH",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche current, single pulse",+          "symbol": "IAS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 11,+          "conditions": "VDS=0...150V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate source voltage (static)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "static;",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate source voltage (dynamic)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "AC (f>1 Hz)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 178.1,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature",+          "symbol": "Tj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous diode forward current",+          "symbol": "IS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 48,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode pulse current",+          "symbol": "IS,pulse",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 151,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse diode dv/dt",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Maximum diode commutation speed",+          "symbol": "diF/dt",+          "kind": "absolute_maximum",+          "unit": "A/s",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 655,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=10mA",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "V(GS)th",+          "kind": "electrical",+          "unit": "V",+          "min": 2.8,+          "typ": null,+          "max": 4.2,+          "conditions": "VDS=VGS, ID=250uA",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VDS=650V, VGS=0V, Tj=25°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS=30V, VDS=0V",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Drain-source on-state resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.5,+          "max": 0.55,+          "conditions": "VGS=10V, ID=4A, Tj=25°C",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance, junction - case (TO220 FullPAK)",+          "symbol": "RthJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 3.65,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance, junction - ambient (TO220 FullPAK)",+          "symbol": "RthJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "device on PCB, minimal footprint",+          "source_page": 3,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "asa65r550e"+  ],+  "discovery_pitch": "ASA65R550E (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "asa65r550e.kicad_sym",+    "asa65r550e.kicad_mod",+    "asa65r550e.glb",+    "asa65r550e.step",+    "asa65r550e.lbr",+    "docs/hero.png",+    "docs/asa65r550e-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "asa65r550e-hero.glb",+    "asa65r550e-hero.overlay.json"+  ]+}