component

ASA60R330E

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ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsasa60r330efactory-2.0.0extractor-text

Changed since verified ASA60R330E

by Ray · last 7 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ASA60R330E · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1pp6kkpw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! asa60r330e.kicad_sym✓ asa60r330e.kicad_mod✓ asa60r330e.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers asa60r330e: symbol viewer · Ray
asa60r330e-hero.glb Publish 0.1.0 · Ray
asa60r330e-hero.overlay.json Publish 0.1.0 · Ray
asa60r330e.glb Publish 0.1.0 · Ray
asa60r330e.kicad_mod Publish 0.1.0 · Ray
asa60r330e.kicad_sym asa60r330e: one-pass backfill (symbol Device:Q_NMOS) · Ray
asa60r330e.lbr asa60r330e: one-pass backfill (symbol Device:Q_NMOS) · Ray
asa60r330e.step Publish 0.1.0 · Ray
package.json Publish 0.1.1 · Ray
page.json Publish 0.1.1 · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

ASA60R330E

ANHI · MOSFETs · TO-220F

ASA60R330E from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input of the enhancement-mode N-channel MOSFET, with threshold voltage 2.8 to 4.2 V and a maximum static gate-source voltage of ±20 V (±30 V dynamic).
2 D passive Drain terminal, with a drain-source breakdown voltage of at least 605 V and a continuous drain current of 11 A at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET, carrying the 11 A continuous drain current at TC=25°C.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 11 A TC=25°C 2
Pulsed drain current ID,pulse 33 A TC=25°C 2
Avalanche energy, single pulse EAS 400 mJ 2
MOSFET dv/dt ruggedness dv/dt 70 V/ns VDS=0...400V 2
Gate source voltage (static) VGS -20 20 V static 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Power dissipation (TO220F) Ptot 32 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=48A, Tj=25°C 2
Thermal resistance, junction - case (TO220 FullPAK) RthJC 3.9 °C/W 3
Thermal resistance, junction - ambient (TO220 FullPAK) RthJA 80 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 605 V VGS=0V, ID=10mA 4
Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 100 nA VDS=600V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.305 0.33 Ω VGS=10V, ID=5.5A, Tj=25°C 4
Gate resistance (Intrinsic) RG 10.8 Ω f=1MHz, open drain 4
Input capacitance Ciss 901 pF VGS=0V, VDS=50V, f=10kHz 4
Output capacitance Coss 59 pF VGS=0V, VDS=50V, f=10kHz 4
Reverse transfer capacitance Crss 5.3 pF VGS=0V, VDS=50V, f=10kHz 4
Turn-on delay time td(on) 7.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 4
Rise time tr 20.8 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 4
Turn-off delay time td(off) 29.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 4
Fall time tf 19.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 4
Gate to source charge Qgs 5.8 nC VDD=400V, ID=4.8A, VGS=0 to 10V 4
Gate to drain charge Qgd 17 nC VDD=400V, ID=4.8A, VGS=0 to 10V 4
Gate charge total Qg 22 nC VDD=400V, ID=4.8A, VGS=0 to 10V 4
Gate plateau voltage Vplateau 5.3 V VDD=400V, ID=4.8A, VGS=0 to 10V 4
Diode forward voltage VSD 0.74 V VGS=0V, IF=1A, Tj=25°C 5
Reverse recovery time trr 250 ns VR=400V, IF=4.8 A, diF/dt=100A/µs; see table 8 5
Reverse recovery charge Qrr 2.572 uC VR=400V, IF=4.8 A, diF/dt=100A/µs; see table 8 5
Peak reverse recovery current Irrm 19.6 A VR=400V, IF=4.8 A, diF/dt=100A/µs; see table 8 5

CAD (KiCad official)

  • Symbol: ASA60R330E
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (9 pp, sha256 1a4712bf263bc7f2, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF